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參數(shù)資料
| 型號(hào)： | H5N6001P |
| 文件頁數(shù)： | 4/10頁 |
| 文件大小： | 468K |
| 代理商： | H5N6001P |
H5N6001P
Rev.0, May 2001, page 4 of 10
Main Characteristics
200
150
100
50
0
50
100
150
200
30
10
3
1
0.3
0.1
1
3
10
30
100
300
1000
50
40
30
20
10
0
4
8
12
16
20
50
40
30
20
10
0
2
4
6
8
10
0.03
0.01
100
Ta = 25
°
C
10 V
V = 4.5 V
5 V
5.5 V
Tc = 75
°
C
25
°
C
-25
°
C
C
Case Temperature Tc (
°
C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
D
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
D
D
Typical Output Characteristics
Pulse Test
Gate to Source Voltage V (V)
D
Typical Transfer Characteristics
D
V = 10 V
Pulse Test
100
μ
s
1ms
PW=10ms(1sho)
(TDCOpeaion
°
C
10
μ
s
6 V
8 V
Operation in
this area is
limited by R
DS(on)
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| H5N6001P_05 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N6001P-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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