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參數(shù)資料
| 型號(hào)： | HAT2197R |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel Power MOS FET Power Switching |
| 中文描述： | 硅?通道功率MOS場(chǎng)效應(yīng)管電源開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 98K |
| 代理商： | HAT2197R |
HAT2197R
Rev.2.00, Apr.02.2004, page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to ambient thermal impedance
θ
ch-a
Note3
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
μ
s, duty cycle
≤
1%
2. Value at Tch = 25
°
C, Rg
≥
50
3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤
10s
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
I
AP
Note 2
E
AR
Note 2
Pch
Note3
Ratings
30
±20
16
128
16
16
25.6
2.5
50
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°
C/W
°C
°C
Note1
Tch
Tstg
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage V
DF
Body–drain diode reverse
recovery time
Notes: 4. Pulse test
Symbol Min
V
(BR)DSS
Typ
—
Max
—
Unit
V
Test Conditions
I
D
= 10 mA, V
GS
= 0
30
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
—
—
1.0
—
—
22
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5.3
6.8
38
2650
610
190
1.2
18
7.5
4.2
10
25
45
4.2
0.80
30
± 0.1
1
2.5
6.7
9.9
—
—
—
—
—
—
—
—
—
—
—
—
1.04
—
μ
A
μ
A
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
V
GS
= ±20 V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
V
DS
= 10 V,
I
D
= 1 mA
I
D
= 8 A, V
GS
= 10 V
Note4
I
D
= 8 A, V
GS
= 4.5 V
Note4
I
D
= 8 A, V
DS
= 10 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
V
DD
= 10 V
V
GS
= 4.5 V
I
D
= 16 A
V
GS
= 10 V, I
D
= 8 A
V
DD
10 V
R
L
= 1.25
Rg = 4.7
IF = 16 A, V
GS
= 0
Note4
IF = 16 A, V
GS
= 0
diF/ dt = 100 A/
μ
s
t
rr
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|---|---|
| HAT2197R-EL-E | 功能描述:MOSFET N-CH 30V 16A 8SOP RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| HAT2198R | 功能描述:MOSFET N-CH 30V 14A 8-SOP RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| HAT2198R-EL-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 30V 14A 8-Pin SOP |
| HAT2198WP | 制造商:Renesas Electronics Corporation 功能描述:MOSFET - Tape and Reel |
| HAT2199R | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 30V 11A 8SOP - Tape and Reel |
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