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參數(shù)資料
| 型號： | HAT2299WP |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel Power MOS FET Power Switching |
| 中文描述： | 硅?通道功率MOS場效應(yīng)管電源開關(guān) |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 113K |
| 代理商： | HAT2299WP |
HAT2299WP
Rev.1.00 Mar 20, 2007 page 4 of 6
0.5
0.4
0.3
0.2
0.1
25
0
25
50
75
100 125
150
0
0.3
0.1
3
30
100
100
30
10
3
1
0.3
0.1
1
10
Case Temperature Tc (
°
C)
S
D
)
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I
D
(A)
Forward Transfer Admittance vs.
Drain Current
F
V
GS
= 10 V
Pulse Test
0
50
100
150
3000
1000
10000
100
300
240
0
16
180
12
120
8
60
4
4
8
12
16
20
0
1000
100
1
0.1
10
0.3
1
3
10
30
100
30
10
3
1
V
GS
= 0
f = 1 MHz
Coss
Crss
I
D
= 14 A
V
DS
V
GS
C
Drain to Source Voltage V
DS
(V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nC)
D
D
G
G
Dynamic Input Characteristics
Drain Current I
D
(A)
S
Switching Characteristics
V
DD
= 120 V
60 V
30 V
td(on)
td(off)
V
GS
= 10 V, V
DD
= 75 V
PW = 5
μ
s, duty
≤
1 %
R
G
= 10
V
DD
= 30 V
60 V
120 V
tr
tr
tf
tf
75
°
C
V
DS
= 10 V
Pulse Test
7 A
I
D
= 28 A
14 A
25
°
C
Tc =
25
°
C
Ciss
0
0.4
0.8
1.2
1.6
2.0
20
8
Source to Drain Voltage V
SD
(V)
Reverse Drain Current vs.
Source to Drain Voltage
R
D
Pulse Test
4
12
16
10 V
5 V
V
GS
= 0,
5 V
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