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參數(shù)資料
| 型號： | HAT2299WP |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel Power MOS FET Power Switching |
| 中文描述： | 硅?通道功率MOS場效應(yīng)管電源開關(guān) |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 113K |
| 代理商： | HAT2299WP |
HAT2299WP
Rev.1.00 Mar 20, 2007 page 3 of 6
Main Characteristics
40
30
20
10
0
50
100
150
200
20
16
12
8
4
0
2
4
6
8
10
20
16
12
8
4
0
2
4
6
8
10
V
GS
= 5.4 V
Tc = 75
°
C
25
°
C
C
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage V
DS
(V)
D
D
Typical Output Characteristics
Pulse Test
Gate to Source Voltage V
GS
(V)
D
D
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
6
4
2
0
4
8
12
16
20
1
30
100
3
10
300
1000
0.2
0.1
0.05
1
0.5
0.02
0.01
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
D
D
Drain Current I
D
(A)
D
D
)
Static Drain to Source on State Resistance
vs. Drain Current
8
I
D
= 28 A
Pulse Test
V
GS
= 10 V
Pulse Test
30
10
3
1
0.3
0.1
1
3
10
30
300
1000
0.03
0.001
0.01
0.003
100
Drain to Source Voltage V
DS
(V)
D
D
Maximum Safe Operation Area
100
Ta = 25
°
C
100
μ
s
1 ms
10
μ
s
Operation in this
area is limited by
R
DS(on)
PW = 10 ms
(1shot)
DC Operaton
°
C)
14 A
7 A
7 V
5.9 V
25
°
C
6.5 V
8 V
10 V
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