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參數(shù)資料
| 型號： | HAT2299WP |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel Power MOS FET Power Switching |
| 中文描述： | 硅?通道功率MOS場效應管電源開關 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 113K |
| 代理商： | HAT2299WP |
HAT2299WP
Rev.1.00 Mar 20, 2007 page 2 of 6
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
|y
fs
|
R
DS(on)
Min
150
—
—
3.0
6
—
Typ
—
—
—
—
10
0.097
Max
—
1
±
0.1
4.0
—
0.11
Unit
V
μ
A
μ
A
V
S
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 150 V, V
GS
= 0
V
GS
=
±
30 V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 7 A, V
DS
= 10 V
Note4
I
D
= 7 A, V
GS
= 10 V
Note4
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
—
—
—
—
—
—
—
—
—
—
—
—
710
160
13
26
31
53
7
15
4.3
5.6
0.85
95
—
—
—
—
—
—
—
—
—
—
1.4
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 7 A
V
GS
= 10 V
R
L
= 10.7
Rg = 10
V
DD
= 120 V
V
GS
= 10 V
I
D
= 14 A
I
F
= 14 A, V
GS
= 0
Note4
I
F
= 14 A, V
GS
= 0
di
F
/dt = 100 A/
μ
s
Notes: 4. Pulse test
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