參數(shù)資料
型號： HM-6504
廠商： Intersil Corporation
英文描述： 4096 x 1 CMOS RAM
中文描述： 4096 × 1 CMOS存儲器
文件頁數(shù)： 3/10頁
文件大?。?/td> 167K
代理商： HM-6504
6-136
Absolute Maximum Ratings
Thermal Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+7.0V
Input, Output or I/O Voltage . . . . . . . . . . . GND -0.3V to VCC +0.3V
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
CERDIP Package . . . . . . . . . . . . . . . .
Maximum Storage Temperature Range . . . . . . . . .-65
o
C to +150
o
C
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . .+175
o
C
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . .+300
o
C
θ
JA
θ
JC
75
o
C/W
15
o
C/W
Die Characteristics
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6910 Gates
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range. . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.3V to +0.8V
Input High Voltage. . . . . . . . . . . . . . . . . . . VCC -2.0V to VCC +0.3V
TABLE 1. HM-6504/883 DC ELECTRICAL PERFORMANCE SPECIFICATIONS
Device Guaranteed and 100% Tested
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Output Low Voltage
VOL
VCC = 4.5V,
IOL = 2mA
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-
0.4
V
Output High Voltage
VOH
VCC = 4.5V,
IOH = -1.0mA
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
2.4
-
V
Input Leakage Current
II
VCC = 5.5V,
VI = GND or VCC
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-1.0
+1.0
μ
A
Output Leakage Current
IOZ
VCC = 5.5V,
VO = GND or VCC
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-1.0
+1.0
μ
A
Data Retention Supply Current
ICCDR
VCC = 2.0V,
E = VCC,
IO = 0mA
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-
25
μ
A
Operating Supply Current
ICCOP
VCC = 5.5V,
(Note 2),
E = 1MHz,
IO = 0mA
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-
7
mA
Standby Supply Current
ICCSB
VCC = 5.0V,
E = VCC -0.3V,
IO = 0mA
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-
50
μ
A
NOTES:
1. All voltage referenced to device GND.
2. Typical derating 1.5mA/MHz increase in ICCOP.
HM-6504/883
相關PDF資料
PDF描述
HM-6504883 4096 x 1 CMOS RAM
HM1-6504B883 4096 x 1 CMOS RAM
HM1-6508B883 1024 x 1 CMOS RAM
HM1-6508883 1024 x 1 CMOS RAM
HM-6508 1024 x 1 CMOS RAM
相關代理商/技術參數(shù)
參數(shù)描述
HM-6504/883 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:4096 x 1 CMOS RAM
HM-6504883 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:4096 x 1 CMOS RAM
HM-6508 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:1024 x 1 CMOS RAM
HM-6508/883 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:1024 x 1 CMOS RAM
HM-6508883 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:1024 x 1 CMOS RAM
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