參數(shù)資料
型號： HM5425801BTT-10
廠商： ELPIDA MEMORY INC
元件分類： DRAM
英文描述： 256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank/ 16-Mword 】 4-bit 】 4-bank
中文描述： 32M X 8 DDR DRAM, 0.8 ns, PDSO66
封裝： 0.400 INCH, PLASTIC, TSOP2-66
文件頁數(shù)： 13/65頁
文件大?。?/td> 489K
代理商： HM5425801BTT-10
HM5425161B, HM5425801B, HM5425401B Series
Data Sheet E0086H20
13
Read with auto-precharge [READA]:
This command starts a read operation. After completion of the read
operation, precharge is automatically executed.
Column address strobe and write command [WRIT]:
This command starts a write operation. The start
address of the burst write is determined by the column address (AY0 to AY8; the HM5425161B, AY0 to
AY9; the HM5425801B, AY0 to AY9, AY11; the HM5425401B) and the bank select address (BA).
Write with auto-precharge [WRITA]:
This command starts a write operation. After completion of the
write operation, precharge is automatically executed.
Row address strobe and bank activate [ACTV]:
This command activates the bank selected by BA0/BA1
and determines a row address (AX0 to AX12). When BA1 = BA0 = Low, bank 0 is activated. When BA1 =
High and BA0 = Low, bank 1 is activated. When BA1 = Low and BA0 = High, bank 2 is activated. When
BA1 = BA0 = High, bank 3 is activated.
Precharge selected bank [PRE]:
This command starts a pre-charge operation for the bank selected by
BA0/BA1.
Precharge all banks [PALL]:
This command starts a precharge operation for all banks.
Refresh [REF/SELF]:
This command starts a refresh operation. There are two types of refresh operation,
one is auto-refresh, and another is self-refresh. For details, refer to the CKE truth table section.
Mode register set/Extended mode register set [MRS/EMRS]:
The DDR SDRAM has the two mode
registers, the mode register and the extended mode register, to defines how it works. The both mode registers
are set through the address pins (the A0 to the A12, BA0 to BA1) in the mode register set cycle. For details,
refer to "Mode register and extended mode register set".
相關(guān)PDF資料
PDF描述
HM5425401BTT-10 256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank/ 16-Mword 】 4-bit 】 4-bank
HM5425161B 256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank/ 16-Mword 】 4-bit 】 4-bank
HM5425401B 256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank/ 16-Mword 】 4-bit 】 4-bank
HM5425801B 256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank/ 16-Mword 】 4-bit 】 4-bank
HM5425161BTT-75A 256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank/ 16-Mword 】 4-bit 】 4-bank
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HM5425801BTT-75A 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank/ 16-Mword 】 4-bit 】 4-bank
HM5425801BTT-75B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank/ 16-Mword 】 4-bit 】 4-bank
HM5444R42HLF 制造商:BITECH 制造商全稱:Bi technologies 功能描述:High Current Toroidal Inductors
HM54-44R42HLF 功能描述:HIGH CURRENT TOROIDAL INDUCTORS RoHS:是 類別:電感器，線圈，扼流圈 >> 固定式 系列:HM54 標(biāo)準(zhǔn)包裝:500 系列:1331 電感:1.2µH 電流:247mA 電流 - 飽和:247mA 電流 - 溫升:- 類型:鐵芯體 容差:±10% 屏蔽:屏蔽 DC 電阻(DCR):最大 730 毫歐 Q因子@頻率:40 @ 7.9MHz 頻率 - 自諧振:130MHz 材料 - 芯體:鐵 封裝/外殼:0.312" L x 0.115" W x 0.135" H（7.94mm x 2.92mm x 3.43mm） 安裝類型:表面貼裝 包裝:帶卷 (TR) 工作溫度:-55°C ~ 105°C 頻率 - 測試:7.9MHz
HM5444R42VLF 制造商:BITECH 制造商全稱:Bi technologies 功能描述:High Current Toroidal Inductors
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