參數資料
型號: HN29W6484AH03TE
廠商: Hitachi,Ltd.
英文描述: Controller for AND Flash Memory(AND型閃速存儲器控制器)
中文描述: 控制器及快閃記憶體(及型閃速存儲器控制器)
文件頁數: 44/73頁
文件大?。?/td> 435K
代理商: HN29W6484AH03TE
HN29W6484AH03TE-1
44
Identify Drive Information
Word address Default value Total bytes Data field type information
0
848AH
2
General configuration bit-significant information
1
XXXX
2
Default number of cylinders
2
0000H
2
Reserved
3
00XXH
2
Default number of heads
4
0000H
2
Number of unformatted bytes per track
5
XXXX
2
Number of unformatted bytes per sector
6
XXXX
2
Default number of sectors per track
7 to 8
XXXX
4
Number of sectors per card (Word7 = MSW, Word8 = LSW)
9
0000H
2
Reserved
10 to 19
XXXX
20
Reserved
20
0002H
2
Buffer type (dual ported)
21
0002H
2
Buffer size in 512 byte increments
22
0004H
2
# of ECC bytes passed on Read/Write Long Commands
23 to 46
XXXX
48
Firmware revision in ASCII etc.
47
0001H
2
Maximum of 1 sector on Read/Write Multiple command
48
0000H
2
Double Word not supported
49
0200H
2
Capabilities: DMA NOT Supported (bit 8), LBA supported
(bit9)
50
0000H
2
Reserved
51
0100H
2
PIO data transfer cycle timing mode 1
52
0000H
2
DMA data transfer cycle timing mode not Supported
53 to 58
XXXX
12
Reserved
59
010XH
2
Multiple sector setting is valid
60 to 61
XXXX
4
Total number of sectors addressable in LBA Mode
62 to 127
0000H
138
Reserved
128 to 159
XXXXH
64
Reserved vendor unique bytes
160 to 255
0000H
192
Reserved
6. Idle (code: E3H or 97H): This command causes the Card to set BSY, enter the Idle mode, clear BSY and
generate an interrupt. If sector count is non-zero, the automatic power down mode is enabled. If the sector
count is zero, the automatic power down mode is disabled.
7. Idle Immediate (code: E1H or 95H): This command causes the Card to set BSY, enter the Idle (Read)
mode, clear BSY and generate an interrupt.
8. Initialize Drive Parameters (code: 91H): This command enables the host to set the number of sectors per
track and the number of heads per cylinder.
相關PDF資料
PDF描述
HN29W6484DH08TE Controller for AND Flash Memory(AND型閃速存儲器控制器)
HN29WB800 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory
HN29WT800 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory
HN462532 4096-word X 8-bit UV Erasable and Programmable Read Only Memory
HN462716 2048-WORD x 8-BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE ONLY MEMORY
相關代理商/技術參數
參數描述
HN29W6484AH03TE-1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MEMORY CONTROLLER
HN29W64AH05TE-1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MEMORY CONTROLLER
HN29W8411SERIES 制造商:未知廠家 制造商全稱:未知廠家 功能描述:AND Flash EEPROM
HN29WB800 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory
HN29WB800FP-10 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM