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參數(shù)資料
| 型號(hào)： | HN29W6484AH03TE |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Controller for AND Flash Memory(AND型閃速存儲(chǔ)器控制器) |
| 中文描述： | 控制器及快閃記憶體（及型閃速存儲(chǔ)器控制器） |
| 文件頁數(shù)： | 46/73頁 |
| 文件大?。?/td> | 435K |
| 代理商： | HN29W6484AH03TE |
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HN29W6484AH03TE-1
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22. Translate Sector (code: 87H): This command allows the host a method of determining the exact number
of times a user sector has been erased and programmed.
23. Wear Level (code: F5H): This command effectively a NOP command and only implemented for
backward compatibility. The Sector Count Register will always be returned with an 00H indicating Wear
Level is not needed.
24. Write Buffer (code: E8H): This command enables the host to overwrite contents of the Card’s sector
buffer with any data pattern desired.
25. Write Long Sector (code: 32H or 33H): This command is provided for compatibility purposes and is
similar to the Write Sector(s) command except that it writes 516 bytes instead of 512 bytes.
26. Write Multiple (code: C5H): This command is similar to the Write Sectors command. Interrupts are not
presented on each sector, but on the transfer of a block which contains the number of sectors defined by Set
Multiple command.
27. Write Multiple without Erase (code: CDH): This command is similar to the Write Multiple command
with the exception that an implied erase before write operation is not performed.
28. Write Sector(s) (code: 30H or 31H): This command writes from 1 to 256 sectors as specified in the
Sector Count register. A sector count of zero requests 256 sectors. The transfer begins at the sector specified
in the Sector Number register.
29. Write Sector(s) without Erase (code: 38H): This command is similar to the Write Sector(s) command
with the exception that an implied erase before write operation is not performed.
30. Write Verify (code: 3CH): This command is similar to the Write Sector(s) command, except each sector
is verified immediately after being written.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HN29W6484DH08TE | Controller for AND Flash Memory(AND型閃速存儲(chǔ)器控制器) |
| HN29WB800 | 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory |
| HN29WT800 | 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory |
| HN462532 | 4096-word X 8-bit UV Erasable and Programmable Read Only Memory |
| HN462716 | 2048-WORD x 8-BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE ONLY MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN29W6484AH03TE-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MEMORY CONTROLLER |
| HN29W64AH05TE-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MEMORY CONTROLLER |
| HN29W8411SERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:AND Flash EEPROM |
| HN29WB800 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory |
| HN29WB800FP-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
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