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| 型號(hào)： | HN29W6484AH03TE |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Controller for AND Flash Memory(AND型閃速存儲(chǔ)器控制器) |
| 中文描述： | 控制器及快閃記憶體（及型閃速存儲(chǔ)器控制器） |
| 文件頁(yè)數(shù)： | 9/73頁(yè) |
| 文件大?。?/td> | 435K |
| 代理商： | HN29W6484AH03TE |
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HN29W6484AH03TE-1
9
Signal name
Direction Pin No.
Description
-IOWR
(PC Card Memory mode)
I
105
This signal is not used.
-IOWR
(PC Card I/O mode)
-IOWR is used for control of data write in I/O task file
area. This card does not respond to -IOWR until I/O
card interface setting up.
-IOWR
(True IDE mode)
-IOWR is used for control of data write in I/O task file
area. This card does not respond to -IOWR until True
IDE interface setting up.
-OE
(PC Card Memory mode)
I
101
-
OE is used for the control of reading register’s data in
attribute area or task file area.
-OE
(PC Card I/O mode)
-
OE is used for the control of reading register’s data in
attribute area.
-ATASEL
(True IDE mode)
To enable True IDE mode this input should be
grounded by the host.
RDY/-BSY
(PC Card Memory mode)
O
113
The signal is RDY/-BSY pin. RDY/-BSY pin turns low
level during the card internal initialization operation at
VCC applied or reset applied, so next access to the
card should be after the signal turned high level.
-IREQ
(PC Card I/O mode)
This signal is active low -IREQ pin. The signal of low
level indicates that the card is requesting software
service to host, and high level indicates that the card
is not requesting.
INTRQ
(True IDE mode)
This signal is the active high Interrupt Request to the
host.
-REG
(PC Card Memory mode)
Attribute memory select
I
3
-REG is used during memory cycles to distinguish
between task file and attribute memory accesses.
High for task file, Low for attribute memory is
accessed.
-REG
(PC Card I/O mode)
-REG is constantly low when task file or attribute
memory is accessed.
-REG
(True IDE mode)
This input signal is not used and should be connected
to VCC.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HN29W6484DH08TE | Controller for AND Flash Memory(AND型閃速存儲(chǔ)器控制器) |
| HN29WB800 | 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory |
| HN29WT800 | 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory |
| HN462532 | 4096-word X 8-bit UV Erasable and Programmable Read Only Memory |
| HN462716 | 2048-WORD x 8-BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE ONLY MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN29W6484AH03TE-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MEMORY CONTROLLER |
| HN29W64AH05TE-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MEMORY CONTROLLER |
| HN29W8411SERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:AND Flash EEPROM |
| HN29WB800 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory |
| HN29WB800FP-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
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