參數(shù)資料
型號: HN29W6484DH08TE
廠商: Hitachi,Ltd.
英文描述: Controller for AND Flash Memory(AND型閃速存儲器控制器)
中文描述: 控制器及快閃記憶體(及型閃速存儲器控制器)
文件頁數(shù): 53/74頁
文件大小: 251K
代理商: HN29W6484DH08TE
HN29W6484DH08TE-1
53
DC Characteristics-1
(Ta = 0 to +70
°
C, V
CC
= 3.3 V
±
5
%
)
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
Input voltage (CMOS level)
V
IHC
V
ILC
V
IHC
V
ILC
V
TC+
V
TC–
V
TC
*
2
V
OH
0.7
×
V
CC
–0.3
V
CC
+ 0.3 V
0.2
×
V
CC
V
V
CC
+ 0.3 V
0.6
Input voltage (TTL level)
2.0
–0.3
V
Schmitt circuit (CMOS level)*
1
(1.6)
2.6
V
V
CC
= 3.3 V
0.7
(1.7)
V
(0.3)
V
Output voltage (CMOS)
(2 mA)*
3
V
CC
– 0.4
V
I
OH
= –2 mA
V
OL
V
OH
0.4
V
I
OL
= 2 mA
I
OH
= –3 mA
Output voltage (CMOS)
(3 mA)*
3
V
CC
– 0.4
V
V
OL
V
OH
0.4
V
I
OL
= 3 mA
I
OH
= –2 mA
Output voltage (CMOS)
(2 mA/3 mA)*
3
V
CC
– 0.4
V
V
OL
V
OH
0.4
V
I
OL
= 3 mA
I
OH
= –1 mA
Output voltage (CMOS)
(1 mA/2 mA)*
3
V
CC
– 0.4
V
V
OL
I
LI
I
LO
–I
PU
–I
PU
I
SP1
0.4
V
I
OL
= 2 mA
Input leakage current*
4
1
μ
A
μ
A
Output leakage current*
4
1
V
OUT
= high impedance
Pull-up current/(Resistivity)
15/(230)
80/(41)
230/(13.7)
μ
A/(k
) V
IN
= GND
16/(206) 36/(85)
Pull-up current/(Resistivity)*
5
2/(1800)
μ
A/(k
) V
IN
= GND
mA
CMOS level (control
signal = V
CC
– 0.2)
mA
CMOS level (control
signal = V
CC
– 0.2)
mA
Sleep/standby current*
8
(0.2)
(0.5)
Sector read current*
6, 8
I
CCR
(DC)
(25)
(50)
I
CCR
(Peak) —
I
CCW
(DC)
(50)
(80)
Sector write current*
7, 8
(25)
(50)
mA
CMOS level (control
signal = V
CC
– 0.2)
I
CCW
(Peak) —
(50)
(80)
mA
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