參數(shù)資料
型號： HUF75333G3
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： Lead Acid Battery; Voltage Rating:6V; Battery Capacity:1Ah; Battery Terminals:Solder Tab RoHS Compliant: NA
中文描述： 56 A, 55 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
文件頁數(shù)： 3/9頁
文件大?。?/td> 108K
代理商： HUF75333G3
105
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 12)
-
1300
-
pF
Output Capacitance
C
OSS
-
480
-
pF
Reverse Transfer Capacitance
C
RSS
-
115
-
pF
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 66A
I
SD
= 66A, dI
SD
/dt = 100A/
μ
s
I
SD
= 66A, dI
SD
/dt = 100A/
μ
s
-
-
1.25
V
Reverse Recovery Time
t
rr
-
-
75
ns
Reverse Recovered Charge
Q
RR
-
-
140
nC
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
175
10
20
30
40
50
60
70
50
75
100
125
150
175
25
0
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
0.1
1
10
-4
10
-3
10
-2
10
-1
10
0
10
1
2
0.01
10
-5
t, RECTANGULAR PULSE DURATION (s)
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
Z
θ
J
,
T
HUF75333G3, HUF75333P3, HUF75333S3S
相關(guān)PDF資料
PDF描述
HUF75333P3 66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs
HUF75333S3S 66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs
HUF75339G3 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs
HUF75339P3 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.012 Ω, N溝道UltraFET功率MOS場效應(yīng)管)
HUF75339S3S 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.012 Ω, N溝道UltraFET功率MOS場效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF75333P3 功能描述:MOSFET TO-220 N-CH 55V 66A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75333P3 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N TO-220
HUF75333P3_NS2552 制造商:Fairchild Semiconductor Corporation 功能描述:
HUF75333P3_Q 功能描述:MOSFET TO-220 N-CH 55V 66A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75333S3 功能描述:MOSFET 66a 55V 0.016Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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