參數(shù)資料
型號(hào)： HUF75333G3
廠商： HARRIS SEMICONDUCTOR
元件分類(lèi)： JFETs
英文描述： Lead Acid Battery; Voltage Rating:6V; Battery Capacity:1Ah; Battery Terminals:Solder Tab RoHS Compliant: NA
中文描述： 56 A, 55 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
文件頁(yè)數(shù)： 9/9頁(yè)
文件大?。?/td> 108K
代理商： HUF75333G3
111
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
SPICE Thermal Model
REV January 1999
HUF75333
CTHERM1 th 6 4.9e-4
CTHERM2 6 5 4.5e-3
CTHERM3 5 4 6.0e-3
CTHERM4 4 3 8.5e-3
CTHERM5 3 2 1.0e-2
CTHERM6 2 tl 5.0e-2
RTHERM1 th 6 6.0e-4
RTHERM2 6 5 6.8e-3
RTHERM3 5 4 3.3e-2
RTHERM4 4 3 9.7e-2
RTHERM5 3 2 3.3e-1
RTHERM6 2 tl 3.6e-1
SABER Thermal Model
SABER thermal model HUF75333
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 4.9e-4
ctherm.ctherm2 6 5 = 4.5e-3
ctherm.ctherm3 5 4 = 6.0e-3
ctherm.ctherm4 4 3 = 8.5e-3
ctherm.ctherm5 3 2 = 1.0e-2
ctherm.ctherm6 2 tl = 5.0e-2
rtherm.rtherm1 th 6 = 6.0e-4
rtherm.rtherm2 6 5 = 6.8e-3
rtherm.rtherm3 5 4 = 3.3e-2
rtherm.rtherm4 4 3 = 9.7e-2
rtherm.rtherm5 3 2 = 3.3e-1
rtherm.rtherm6 2 tl = 3.6e-1
}
RTHERM4
RTHERM6
RTHERM5
RTHERM3
RTHERM2
RTHERM1
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
2
3
4
5
6
th
JUNCTION
CASE
HUF75333G3, HUF75333P3, HUF75333S3S
相關(guān)PDF資料
PDF描述
HUF75333P3 66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs
HUF75333S3S 66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs
HUF75339G3 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs
HUF75339P3 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.012 Ω, N溝道UltraFET功率MOS場(chǎng)效應(yīng)管)
HUF75339S3S 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.012 Ω, N溝道UltraFET功率MOS場(chǎng)效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF75333P3 功能描述:MOSFET TO-220 N-CH 55V 66A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75333P3 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N TO-220
HUF75333P3_NS2552 制造商:Fairchild Semiconductor Corporation 功能描述:
HUF75333P3_Q 功能描述:MOSFET TO-220 N-CH 55V 66A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75333S3 功能描述:MOSFET 66a 55V 0.016Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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