參數(shù)資料
型號(hào)： HUF75333G3
廠(chǎng)商： HARRIS SEMICONDUCTOR
元件分類(lèi)： JFETs
英文描述： Lead Acid Battery; Voltage Rating:6V; Battery Capacity:1Ah; Battery Terminals:Solder Tab RoHS Compliant: NA
中文描述： 56 A, 55 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
文件頁(yè)數(shù)： 5/9頁(yè)
文件大?。?/td> 108K
代理商： HUF75333G3
107
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
Typical Performance Curves
(Continued)
1.0
1.5
2.0
2.5
-40
0
40
80
120
160
200
0.5-80
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 66A
0.4
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
T
N
V
GS
= V
DS
, I
D
= 250
μ
A
0.9
1.0
1.1
1.2
-40
0
40
80
120
160
200
0.8
-80
T
J
, JUNCTION TEMPERATURE (
o
C)
N
I
D
= 250
μ
A
B
500
1000
1500
2000
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
20
30
40
50
60
0
0
C
C
ISS
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
2
4
6
8
10
10
20
30
40
0
0
V
G
,
I
D
= 66A
I
D
= 50A
I
D
= 33A
I
D
= 16A
WAVEFORMS IN
DESCENDING ORDER:
V
DD
= 30V
Q
g
, GATE CHARGE (nC)
HUF75333G3, HUF75333P3, HUF75333S3S
相關(guān)PDF資料
PDF描述
HUF75333P3 66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs
HUF75333S3S 66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs
HUF75339G3 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs
HUF75339P3 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.012 Ω, N溝道UltraFET功率MOS場(chǎng)效應(yīng)管)
HUF75339S3S 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.012 Ω, N溝道UltraFET功率MOS場(chǎng)效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF75333P3 功能描述:MOSFET TO-220 N-CH 55V 66A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75333P3 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N TO-220
HUF75333P3_NS2552 制造商:Fairchild Semiconductor Corporation 功能描述:
HUF75333P3_Q 功能描述:MOSFET TO-220 N-CH 55V 66A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75333S3 功能描述:MOSFET 66a 55V 0.016Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠(chǎng)商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*