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參數(shù)資料
| 型號(hào)： | HYB 39S128160CT |
| 廠商： | SIEMENS AG |
| 英文描述： | 128-Mbit(4banks × 2MBit × 16) Synchronous DRAM(128M(4列 × 2M位 × 16)同步動(dòng)態(tài)RAM) |
| 中文描述： | 128兆位（4banks × 2Mbit的× 16）同步DRAM（128M的（4列× 2位× 16）同步動(dòng)態(tài)RAM）的 |
| 文件頁(yè)數(shù)： | 14/42頁(yè) |
| 文件大?。?/td> | 280K |
| 代理商： | HYB 39S128160CT |
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HYB 39S128400/800/160CT(L)
128-MBit Synchronous DRAM
Data Book
14
1.00
Burst Termination
Once a burst read or write operation has been initiated, there are several methods in which to
terminate the burst operation prematurely. These methods include using another Read or Write
Command to interrupt an existing burst operation, use a Precharge Command to interrupt a burst
cycle and close the active bank, or using the Burst Stop Command to terminate the existing burst
operation but leave the bank open for future Read or Write Commands to the same page of the
active bank. When interrupting a burst with another Read or Write Command care must be taken to
avoid DQ contention. The Burst Stop Command, however, has the fewest restrictions making it the
easiest method to use when terminating a burst operation before it has been completed. If a Burst
Stop command is issued during a burst write operation, then any residual data from the burst write
cycle will be ignored. Data that is presented on the DQ pins before the Burst Stop Command is
registered will be written to the memory.
Bank Selection by Address Bits
A10
BA0
BA1
0
0
0
Bank 0
0
0
1
Bank 1
0
1
0
Bank 2
0
1
1
Bank 3
1
x
x
all Banks
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB 39S128400CT | 128-Mbit(4banks × 8MBit × 4) Synchronous DRAM(128M(4列 × 8M位 × 4)同步動(dòng)態(tài)RAM) |
| HYB 39S128800CT | 128-Mbit(4banks × 4MBit × 8) Synchronous DRAM(128M(4列 × 4M位 × 8)同步動(dòng)態(tài)RAM) |
| HYB 39S16160CT-5.5 | 1M × 16-Mbit Synchronous DRAM for High-Speed Graphics Applications(16M位(1M × 16)同步動(dòng)態(tài)RAM(用于高速圖形場(chǎng)合)) |
| HYB 39S16160CT-6 | 1M × 16-Mbit Synchronous DRAM for High-Speed Graphics Applications(16M位(1M × 16)同步動(dòng)態(tài)RAM(用于高速圖形場(chǎng)合)) |
| HYB 39S16160CT-7 | 1M × 16-Mbit Synchronous DRAM for High-Speed Graphics Applications(16M位(1M × 16)同步動(dòng)態(tài)RAM(用于高速圖形場(chǎng)合)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB39S128160CT-7 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:128-MBit Synchronous DRAM |
| HYB39S128160CT-7.5 | 制造商:Infineon Technologies AG 功能描述:SDRAM, 8M x 16, 54 Pin, Plastic, TSOP |
| HYB39S128160CT-75 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:128-MBit Synchronous DRAM |
| HYB39S128160CT-8 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:128-MBit Synchronous DRAM |
| HYB39S128160CTL-7.5 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:128-MBit Synchronous DRAM |
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