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參數(shù)資料
| 型號： | HYB 39S128160CT |
| 廠商： | SIEMENS AG |
| 英文描述： | 128-Mbit(4banks × 2MBit × 16) Synchronous DRAM(128M(4列 × 2M位 × 16)同步動態(tài)RAM) |
| 中文描述： | 128兆位（4banks × 2Mbit的× 16）同步DRAM（128M的（4列× 2位× 16）同步動態(tài)RAM）的 |
| 文件頁數(shù)： | 9/42頁 |
| 文件大?。?/td> | 280K |
| 代理商： | HYB 39S128160CT |
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HYB 39S128400/800/160CT(L)
128-MBit Synchronous DRAM
Data Book
9
1.00
Operation Definition
All of SDRAM operations are defined by states of control signals CS, RAS, CAS, WE, and DQM at
the positive edge of the clock. The following list shows the truth table for the operation commands.
Notes:
1.
V = Valid, x = Don’t Care, L = Low Level, H = High Level.
2. CKEn signal is input level when commands are provided, CKEn-1 signal is input level one clock
before the commands are provided.
3. This is the state of the banks designated by BA0, BA1 signals.
4. Device state is Full Page Burst operation, which is not supported on this device.
5. Power Down Mode can not entry in the burst cycle. Address Input for Mode Set (Mode Register
Operation)
Operation
Device
State
CKE
n-1
CKE
n
DQM
BA0
BA1
AP=
A10
Addr
A11,
A9-0
CS
RAS
CAS
WE
Bank Active
Idle
3
H
X
X
V
V
V
L
L
H
H
Bank Precharge
Any
H
X
X
V
L
X
L
L
H
L
Precharge All
Any
H
X
X
X
H
X
L
L
H
L
Write
Active
3
H
X
X
V
L
V
L
H
L
L
Write with Autoprecharge
Active
3
H
X
X
V
H
V
L
H
L
L
Read
Active
3
H
X
X
V
L
V
L
H
L
H
Read with Autoprecharge
Active
3
H
X
X
V
H
V
L
H
L
H
Mode Register Set
Idle
H
X
X
V
V
V
L
L
L
L
No Operation
Any
H
X
X
X
X
X
L
H
H
H
Burst Stop
Active
4
H
X
X
X
X
X
L
H
H
L
Device Deselect
Any
H
X
X
X
X
X
H
X
X
X
Auto Refresh
Idle
H
H
X
X
X
X
L
L
L
H
Self Refresh Entry
Idle
H
L
X
X
X
X
L
L
L
H
Self Refresh Exit
Idle
(Self
Refr.)
L
H
X
X
X
X
H
X
X
X
L
H
H
X
Power Down Entry
(Precharge or active
standby)
Idle
Active
5
H
L
X
X
X
X
H
X
X
X
L
H
H
X
Power Down Exit
Any
(Power
Down)
L
H
X
X
X
X
H
X
X
X
L
H
H
L
Data Write/Output Enable
Active
H
X
L
X
X
X
X
X
X
X
Data Write/Output Disable
Active
H
X
H
X
X
X
X
X
X
X
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB39S128160CT-7 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128-MBit Synchronous DRAM |
| HYB39S128160CT-7.5 | 制造商:Infineon Technologies AG 功能描述:SDRAM, 8M x 16, 54 Pin, Plastic, TSOP |
| HYB39S128160CT-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128-MBit Synchronous DRAM |
| HYB39S128160CT-8 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128-MBit Synchronous DRAM |
| HYB39S128160CTL-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128-MBit Synchronous DRAM |
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