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參數(shù)資料
| 型號(hào)： | HYB 39S256160T |
| 廠(chǎng)商： | SIEMENS AG |
| 英文描述： | 256-Mbit(4banks × 4MBit × 16) Synchronous DRAM(256M(4列 × 4M位 × 16)同步動(dòng)態(tài)RAM) |
| 中文描述： | 256兆位（4banks ×的4Mb × 16）同步DRAM（256M（4列× 4分位× 16）同步動(dòng)態(tài)RAM）的 |
| 文件頁(yè)數(shù)： | 16/47頁(yè) |
| 文件大?。?/td> | 316K |
| 代理商： | HYB 39S256160T |
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HYB 39S256400/800/160T
256-MBit Synchronous DRAM
Data Book
16
12.99
Operating Currents
T
A
= 0 to 70
°
C,
V
DD
= 3.3 V
±
0.3 V
(Recommended Operating Conditions unless otherwise noted)
Notes
3. These parameters depend on the cycle rate. All values are measured at 133 MHz operation
frequency for -7.5 and at 100 MHz for -8/-8A/-8B components. Input signals are changed once
during
t
CK
, excepts for
I
CC6
and for standby currents when
t
CK
= infinity.
4. These parameters are measured with continuous data stream during read access and all DQ
toggling. CL = 3 and BL = 4 is assumed and the
V
DDQ
current is excluded.
Parameter & Test Condition
Symb. -7.5 -8/-8A/-8B
Unit
Note
max.
Operating current
t
RC
=
t
RC(MIN.)
,
t
CK
=
t
CK(MIN.)
Outputs open, Burst Length = 4, CL=3
All banks operated in random access,
all banks operated in ping-pong
manner to maximize gapless data
access
–
I
CC1
x4
x8
x16
270
270
270
210
210
210
mA
mA
mA
3
Precharge standby current
in Power Down Mode
CS =
V
IH (MIN.)
, CKE
≤
V
IL(MAX.)
Precharge standby current
in Non Power Down Mode
CS =
V
IH (MIN.)
, CKE
≥
V
IH(MIN.)
No operating current
t
CK
= min., CS =
V
IH (MIN.)
,
active state (max. 4 banks)
t
CK
= min
I
CC2P
2
2
mA
3
t
CK
= min
I
CC2N
25
19
mA
3
CKE
≥
V
IH(MIN.)
I
CC3N
CKE
≤
V
IL(MAX.)
I
CC3P
50
45
mA
3
10
10
mA
3
Burst Operating Current
t
CK
= min
Read command cycling
–
I
CC4
x4
x8
x16
150
170
170
100
120
120
mA
mA
mA
3, 4
Auto Refresh Current
t
CK
= min
Auto Refresh command cycling
–
I
CC5
240
240
mA
3
Self Refresh Current
Self Refresh Mode
CKE = 0.2 V
standard
version
I
CC6
2.5
2.5
mA
3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB 39S256400T | 256-Mbit(4banks × 16MBit × 4) Synchronous DRAM(256M(4列 × 16M位 × 4)同步動(dòng)態(tài)RAM) |
| HYB 39S256800T | 256-Mbit(4banks × 8MBit × 8) Synchronous DRAM(256M(4列 × 8M位 × 8)同步動(dòng)態(tài)RAM) |
| HYB 39S256400AT | 256-Mbit(4banks × 16MBit × 4) Synchronous DRAM(256M(4列 × 16M位 × 4)同步動(dòng)態(tài)RAM) |
| HYB 39S256800AT | 256-Mbit(4banks × 8MBit × 8) Synchronous DRAM(256M(4列 × 8M位 × 8)同步動(dòng)態(tài)RAM) |
| HYB 39S256160AT | 256-Mbit(4banks × 4MBit × 16) Synchronous DRAM(256M(4列 × 4M位 × 16)同步動(dòng)態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB39S256160T-7.5 | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:x16 SDRAM |
| HYB39S256160TC-3 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:MEMORY SPECTRUM |
| HYB39S256160TC-37 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:MEMORY SPECTRUM |
| HYB39S256160TC-5 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:MEMORY SPECTRUM |
| HYB39S256160TC-6 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:MEMORY SPECTRUM |
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