參數(shù)資料
型號(hào): HYB 39S256160T
廠商: SIEMENS AG
英文描述: 256-Mbit(4banks × 4MBit × 16) Synchronous DRAM(256M(4列 × 4M位 × 16)同步動(dòng)態(tài)RAM)
中文描述: 256兆位(4banks ×的4Mb × 16)同步DRAM(256M(4列× 4分位× 16)同步動(dòng)態(tài)RAM)的
文件頁數(shù): 47/47頁
文件大?。?/td> 316K
代理商: HYB 39S256160T
HYB39S256400/800/160T
256MBit Synchronous DRAM
Semiconductor Group
46
19. Precharge termination of a Burst
19.1 CAS Latency = 2
Command
Bank A
Activate
T14
BS
Write Data is masked.
of a Write Burst.
Precharge Termination
Addr.
DQ
DQM
AP
Command
Bank A
Activate
Hi Z
Bank A
Write
Command
DAx0
DAx1
RAx
RAx
CAx
Command
Bank A
Command
Bank A
Precharge
DAx3
DAx2
Activate
RAy
RP
t
RAy
Ay0
Command
Bank A
Read
Bank A
Precharge
Command
Ay1 Ay2
CAy
RP
t
T3
CS
WE
CAS
RAS
CKE
CLK
T0
High
CK2
t
T1
T2
T4
T5
T7
T6
T8
T10
T9
T11
T13
T12
Precharge Termination
of a Read Burst.
SPT03933
Bank A
Command
Precharge
Command
Bank A
Read
Az0
Az1
RAz
CAz
RAz
Az2
RP
t
Burst Length = 8 or Full Page, CAS Latency = 2
T20
T17
T15
T16
T18
T19
T21 T22
相關(guān)PDF資料
PDF描述
HYB 39S256400T 256-Mbit(4banks × 16MBit × 4) Synchronous DRAM(256M(4列 × 16M位 × 4)同步動(dòng)態(tài)RAM)
HYB 39S256800T 256-Mbit(4banks × 8MBit × 8) Synchronous DRAM(256M(4列 × 8M位 × 8)同步動(dòng)態(tài)RAM)
HYB 39S256400AT 256-Mbit(4banks × 16MBit × 4) Synchronous DRAM(256M(4列 × 16M位 × 4)同步動(dòng)態(tài)RAM)
HYB 39S256800AT 256-Mbit(4banks × 8MBit × 8) Synchronous DRAM(256M(4列 × 8M位 × 8)同步動(dòng)態(tài)RAM)
HYB 39S256160AT 256-Mbit(4banks × 4MBit × 16) Synchronous DRAM(256M(4列 × 4M位 × 16)同步動(dòng)態(tài)RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB39S256160T-7.5 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SDRAM
HYB39S256160TC-3 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:MEMORY SPECTRUM
HYB39S256160TC-37 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:MEMORY SPECTRUM
HYB39S256160TC-5 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:MEMORY SPECTRUM
HYB39S256160TC-6 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:MEMORY SPECTRUM