參數(shù)資料
型號: HYB 39S64800BT
廠商: SIEMENS AG
英文描述: 64MBit Synchronous DRAM(64M位(4列 × 2M位 × 8)同步動態(tài)RAM)
中文描述: 64兆比特同步DRAM(6400位(4列× 2位× 8)同步動態(tài)RAM)的
文件頁數(shù): 49/53頁
文件大?。?/td> 354K
代理商: HYB 39S64800BT
HYB39S64400/800/160BT(L)
64MBit Synchronous DRAM
Semiconductor Group
48
\
20. Full Page Read Cycle
20.1 CAS Latency = 2
BS
-
page address back to zero
during this time interval.
from the highest order
The burst counter wraps
Addr.
DQM
DQ
AP
+2 Ax
Hi-Z
Command
Bank A
Command
Bank A
Read
Activate
Bank B
Command
Ax
Activate
Ax
+1
Ax
RAx
RAx
CAx
~
~
RBx
RBx
~
~
~
~
SPT03929
bursting beginning with the starting address.
Burst Stop
Command
the burst counter increments and continues
terminate when the burst length is satisfied;
Full Page burst operation does not
Bank B
Command
Ax
Read
-
2
Ax 1
1
Ax+
Bx
Bx+1
Bx+2
+
Bx 3
+
Bx 4
CBx
Bank B
Command
Activate
Command
Bank B
Precharge
Bx
5
Bx+
6
+
RBy
t
RP
RBy
CAS
RAS
CKE
CLK
CS
WE
~
~
~
~
~
~
~
High
CK2
t
T0
T1
T2
~
~
T3
T4
~
~
T5
T6
T15
T11
T7
T8
T10
T9
T13
T12
T14
Burst Length = Full Page, CAS Latency = 2
T16
T17
T18
T19
T20
T21 T22
相關PDF資料
PDF描述
HYB 39S64XXX0BTL 64MBitSynchronous DRAM(64M位同步動態(tài)RAM(低功耗版))
HYB 39S64400CT 64MBit Synchronous DRAM(64M位(4列 × 4M位 × 4)同步動態(tài)RAM)
HYB 39S64800CT 64MBit Synchronous DRAM(64M位(4列 × 2M位 × 8)同步動態(tài)RAM)
HYB 5118165BST-50 1M×16-Bit Dynamic RAM(1M×16位 動態(tài)RAM(快速頁面模式))
HYB3118165BSJ-60 High-Speed Fully-Differential Amplifiers 8-MSOP -40 to 85
相關代理商/技術參數(shù)
參數(shù)描述
HYB39S64800BT-10 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SDRAM
HYB39S64800BT-7 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SDRAM
HYB39S64800BT-7.5 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:64-MBit Synchronous DRAM
HYB39S64800BT-8 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:64-MBit Synchronous DRAM
HYB39S64800BTL-10 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SDRAM