參數(shù)資料
型號(hào): HYB 39S64800BT
廠商: SIEMENS AG
英文描述: 64MBit Synchronous DRAM(64M位(4列 × 2M位 × 8)同步動(dòng)態(tài)RAM)
中文描述: 64兆比特同步DRAM(6400位(4列× 2位× 8)同步動(dòng)態(tài)RAM)的
文件頁(yè)數(shù): 50/53頁(yè)
文件大?。?/td> 354K
代理商: HYB 39S64800BT
HYB39S64400/800/160BT(L)
64MBit Synchronous DRAM
Semiconductor Group
49
20.2 CAS Latency = 3
T14
Bx
Full Page burst operation does not
terminate when the burst length is satisfied;
the burst counter increments and continues
bursting beginning with the starting address.
BS
Command
Bank A
AP
DQM
DQ
Addr.
Command
Bank A
Activate
Hi-Z
Read
RAx
RAx
CAx
page address back to zero
during this time interval.
The burst counter wraps
from the highest order
Activate
Command
Bank B
Ax
Ax 1
2
Ax+
Ax
~
~
-
RBx
RBx
~
~
~
~
~
~
Ax
Read
Command
Bank B
Ax
2
1
Ax
1
Bx
Bx 1
CBx
T3
CLK
CKE
CS
RAS
WE
CAS
T0
High
CK3
t
T1
T2
~
~
~
~
~
~
~
T4
T5
~
~
~
T7
T6
T8
T10
T9
T11
T13
T12
SPT03930
Bank B
Command
Activate
Bank B
Precharge
Command
Burst Stop
Command
+
+2
Bx
Bx
3
4
+
5
+
Bx
RBy
t
RRD
RBy
T20
Burst Length = Full Page, CAS Latency = 3
T17
T15
T16
T18
T19
T21 T22
相關(guān)PDF資料
PDF描述
HYB 39S64XXX0BTL 64MBitSynchronous DRAM(64M位同步動(dòng)態(tài)RAM(低功耗版))
HYB 39S64400CT 64MBit Synchronous DRAM(64M位(4列 × 4M位 × 4)同步動(dòng)態(tài)RAM)
HYB 39S64800CT 64MBit Synchronous DRAM(64M位(4列 × 2M位 × 8)同步動(dòng)態(tài)RAM)
HYB 5118165BST-50 1M×16-Bit Dynamic RAM(1M×16位 動(dòng)態(tài)RAM(快速頁(yè)面模式))
HYB3118165BSJ-60 High-Speed Fully-Differential Amplifiers 8-MSOP -40 to 85
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB39S64800BT-10 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8 SDRAM
HYB39S64800BT-7 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8 SDRAM
HYB39S64800BT-7.5 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:64-MBit Synchronous DRAM
HYB39S64800BT-8 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:64-MBit Synchronous DRAM
HYB39S64800BTL-10 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8 SDRAM