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參數(shù)資料
| 型號： | HYB3117805BSJ-50- |
| 廠商： | SIEMENS AG |
| 英文描述： | 2M x 8 - Bit Dynamic RAM 2k Refresh |
| 中文描述： | 200萬× 8 -位動態(tài)隨機存儲器2k刷新 |
| 文件頁數(shù)： | 5/25頁 |
| 文件大?。?/td> | 258K |
| 代理商： | HYB3117805BSJ-50- |
Semiconductor Group
5
HYB3117805BSJ-50/-60/-70
2M x 8-EDO DRAM
Absolute Maximum Ratings
Operating temperature range ............................................................................................0 to 70 °C
Storage temperature range.........................................................................................– 55 to 150 °C
Input/output voltage ................................................................................-0.5 to min (Vcc+0.5,4.6) V
Power supply voltage...................................................................................................-1.0V to 4.6 V
Power dissipation..................................................................................................................... 0.5 W
Data out current (short circuit) ................................................................................................ 50 mA
Note:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage of
the device. Exposure to absolute maximum rating conditions for extended periods may affect device
reliability.
DC Characteristics
T
A
= 0 to 70 °C,
V
SS
= 0 V,
V
CC
= 3.3 V
±
0.3 V,
t
T
= 2 ns
Parameter
Symbol
Limit Values
Unit Test
Condition
min.
max.
Input high voltage
V
IH
V
IL
V
OH
V
OL
V
OH
V
OL
I
I(L)
2.0
Vcc+0.5
V
1)
Input low voltage
TTL Output high voltage (
I
OUT
= – 2 mA)
TTL Output low voltage (
I
OUT
= 2 mA)
CMOS Output high voltage (
I
OUT
= –100 uA)
CMOS Output low voltage (
I
OUT
= 100 uA)
Input leakage current
(0 V
≤
V
IH
≤
Vcc + 0.3V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V
≤
V
OUT
≤
Vcc + 0.3V)
Average
V
CC
supply current:
– 0.5
0.8
V
1)
2.4
–
V
1)
–
0.4
V
1)
VCC-0.2
–
V
–
0.2
V
μ
A
– 10
10
1)
I
O(L)
– 10
10
μ
A
1)
-50 ns version
-60 ns version
-70 ns version
(RAS, CAS, address cycling,
t
RC
=
t
RC
min.)
Standby
V
CC
supply current (RAS = CAS =
V
IH
)
I
CC2
Average
V
CC
supply current, during RAS-only
refresh cycles:
I
CC1
–
–
–
120
110
100
mA
mA
mA
2) 3) 4)
2) 3) 4)
2) 3) 4)
–
2
mA
–
-50 ns version
-60 ns version
-70 ns version
(RAS cycling: CAS =
V
IH
,
t
RC
=
t
RC
min.)
I
CC3
–
–
–
120
110
100
mA
mA
mA
2) 4)
2) 4)
2) 4)
相關PDF資料 |
PDF描述 |
|---|---|
| HYB3117805BSJ-50 | 2M x 8-Bit Dynamic RAM 2k Refresh |
| HYB 3117805BSJ-50 | 2M*8 Bit Dynamic RAM 2k Refresh（Hyper Page Mode EDO） |
| HYB 3117805BSJ-60 | 2M×8 - Bit Dynamic RAM 2k Refresh（Hyper Page Mode EDO） |
| HYB 5117805BSJ-50 | 2M×8 - Bit Dynamic RAM 2k Refresh（Hyper Page Mode EDO） |
| HYB 5117805BSJ-60 | 2M×8 - Bit Dynamic RAM 2k Refresh（Hyper Page Mode EDO） |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HYB3117805BSJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2M x 8-Bit Dynamic RAM 2k Refresh |
| HYB3117805BSJ-70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EDO Page Mode DRAM |
| HYB3118160BSJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3118160BSJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3118160BSJ-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
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