參數(shù)資料
型號: HYB3117805BSJ-50-
廠商: SIEMENS AG
英文描述: 2M x 8 - Bit Dynamic RAM 2k Refresh
中文描述: 200萬× 8 -位動態(tài)隨機(jī)存儲器2k刷新
文件頁數(shù): 9/25頁
文件大?。?/td> 258K
代理商: HYB3117805BSJ-50-
Semiconductor Group
9
HYB3117805BSJ-50/-60/-70
2M x 8-EDO DRAM
Hyper Page Mode (EDO) Read-modify-Write Cycle
Hyper page mode (EDO) read-
write cycle time
t
PRWC
58
68
77
ns
CAS precharge to WE
t
CPWD
41
49
56
ns
CAS-before-RAS Refresh Cycle
CAS setup time
t
CSR
t
CHR
t
RPC
t
WRP
10
10
10
ns
CAS hold time
10
10
10
ns
RAS to CAS precharge time
5
5
5
ns
Write to RAS precharge time
10
10
10
ns
Write hold time referenced to RAS
t
WRH
10
10
10
ns
CAS-before-RAS Counter Test Cycle
CAS precharge time
t
CPT
35
40
40
ns
Self Refresh Cycle
RAS pulse width
t
RASS
t
RPS
t
CHS
100k
_
100k
_
100k
_
ns
17
RAS precharge
95
_
110
_
130
_
ns
17
CAS hold time
-50
_
-50
_
-50
_
ns
17
Test Mode
Write command setup time
t
WTS
t
WTH
t
CHRT
10
10
10
ns
Write command hold time
10
10
10
ns
CAS hold time
30
30
30
ns
AC Characteristics
(cont’d)
5)6)
16E
T
A
= 0 to 70 °C,
V
CC
= 3.3 V
±
0.3 V,
t
T
= 2 ns
Parameter
Symbol
Limit Values
Unit
Note
-50
-60
-70
min.
max. min.
max. min.
max.
相關(guān)PDF資料
PDF描述
HYB3117805BSJ-50 2M x 8-Bit Dynamic RAM 2k Refresh
HYB 3117805BSJ-50 2M*8 Bit Dynamic RAM 2k Refresh(Hyper Page Mode EDO)
HYB 3117805BSJ-60 2M×8 - Bit Dynamic RAM 2k Refresh(Hyper Page Mode EDO)
HYB 5117805BSJ-50 2M×8 - Bit Dynamic RAM 2k Refresh(Hyper Page Mode EDO)
HYB 5117805BSJ-60 2M×8 - Bit Dynamic RAM 2k Refresh(Hyper Page Mode EDO)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB3117805BSJ-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2M x 8-Bit Dynamic RAM 2k Refresh
HYB3117805BSJ-70 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EDO Page Mode DRAM
HYB3118160BSJ-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
HYB3118160BSJ-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
HYB3118160BSJ-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh