參數(shù)資料
型號(hào)： HYB314175BJL-60
廠商： SIEMENS A G
元件分類(lèi)： DRAM
英文描述： 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
中文描述： 256K X 16 EDO DRAM, 60 ns, PDSO40
封裝： 0.400 INCH, PLASTIC, SOJ-40
文件頁(yè)數(shù)： 5/24頁(yè)
文件大小： 1307K
代理商： HYB314175BJL-60
HYB 314175BJ/BJL-50/-55/-60
3.3V 256K x 16 EDO-DRAM
Semiconductor Group
5
Absolute Maximum Ratings
Operating temperature range ........................................................................................ 0 to + 70
°
C
Storage temperature range..................................................................................... – 55 to + 150
°
C
Input/output voltage .....................................................................................– 1 to (
V
CC
+ 0.5, 4.6) V
Power supply voltage...................................................................................................– 1 to + 4.6 V
Data out current (short circuit) ................................................................................................50 mA
Note:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
T
A
= 0 to 70
°
C;
V
SS
= 0 V;
V
CC
= 3.3 V
±
0.3 V,
t
T
= 2 ns
Parameter
Symbol
Limit Values
Unit Notes
min.
max.
V
CC
+ 0.5
0.8
Input high voltage
V
I
H
V
I
L
V
OH
V
OL
V
OH
V
OL
I
I
(L)
2.4
V
1
Input low voltage
LVTTL Output high voltage (
I
OUT
= – 2.0 mA)
LVTTL Output low voltage (
I
OUT
= 2 mA)
LVCMOS Output high voltage (
I
OUT
= – 100
μ
A)
LVCMOS Output low voltage (
I
OUT
= 100
μ
A)
Input leakage current, any input
(0 V <
V
I
N
< 7 V, all other inputs = 0 V)
Output leakage current
(DO is disabled, 0 V <
V
OUT
<
V
CC
)
Average
V
CC
supply current:
– 1.0
V
1
2.4
–
V
1
–
0.4
V
1
2.4
–
V
1
–
0.4
V
μ
A
1
– 10
10
1
I
O(L)
– 10
10
μ
A
1
-50 version
-55 version
-60 version
I
CC1
–
125
120
105
mA
2, 3, 4
Standby
V
CC
supply current
(RAS = LCAS = UCAS = WE =
V
I
H
)
Average
V
CC
supply current during
RAS-only refresh cycles:
I
CC2
–
2
mA
–
-50 version
-55 version
-60 version
I
CC3
–
125
120
105
mA
2, 4
相關(guān)PDF資料
PDF描述
HYB 314400BJ-50 1M × 4-Bit Dynamic RAM(Fast Page Mode)(1M x 4位 動(dòng)態(tài) RAM(快速頁(yè)面模式))
HYB314400BJ-50 1M x 4-Bit Dynamic RAM
HYB314400BJ-50- 1M x 4-Bit Dynamic RAM
HYB314400BJ-60 IC-DARLINGTON ARRAY 4UNIT RoHS Compliant: Yes
HYB 314400BJ-60 1M × 4-Bit Dynamic RAM(Fast Page Mode)(1M x 4位 動(dòng)態(tài) RAM(快速頁(yè)面模式))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB314265BJ-45 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:256K x 16-Bit EDO-Dynamic RAM
HYB314265BJ-50 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:256K x 16-Bit EDO-Dynamic RAM
HYB314265BJL-45 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:256K x 16-Bit EDO-Dynamic RAM
HYB314265BJL-50 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:256K x 16-Bit EDO-Dynamic RAM
HYB314400BJ-50 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM
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