參數(shù)資料
型號: HYB314175BJL-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
中文描述: 256K X 16 EDO DRAM, 60 ns, PDSO40
封裝: 0.400 INCH, PLASTIC, SOJ-40
文件頁數(shù): 6/24頁
文件大?。?/td> 1307K
代理商: HYB314175BJL-60
HYB 314175BJ/BJL-50/-55/-60
3.3V 256K x 16 EDO-DRAM
Semiconductor Group
6
DC Characteristics
(cont’d)
Capacitance
T
A
= 0 to 70
°
C;
V
CC
= 3.3 V
±
0.3 V,
f
= 1 MHz
Parameter
Symbol
Limit Values
Unit Test
Condition
min.
max.
Average
V
CC
supply current during
hyper page mode (EDO) operation:
-50 version
-55 version
-60 version
I
CC4
115
115
100
mA
2, 3, 4
Standby
V
CC
supply current
(RAS = LCAS = UCAS = WE =
V
CC
– 0.2 V)
Average
V
CC
supply current during
CAS-before-RAS refresh mode:
I
CC5
1
mA
1
-50 version
-55 version
-60 version
I
CC6
125
120
105
mA
2, 4
Standby
V
CC
current (L-version)
(RAS = LCAS = UCAS = WE =
V
CC
– 0.2 V)
Self Refresh Current (L-version)
(RAS, LCAS, UCAS = 0.2V
A0 – A8 =
V
CC
– 0.2 V or 0.2 V)
I
CC5
200
μ
A
I
CCS
250
μ
A
Parameter
Symbol
Limit Values
Unit
min.
max.
Input capacitance (A0 to A8)
C
I
1
C
I
2
C
I
O
5
pF
Input capacitance (RAS, UCAS, LCAS, WE, OE)
7
pF
Output capacitance (l/O1 to l/O16)
7
pF
相關(guān)PDF資料
PDF描述
HYB 314400BJ-50 1M × 4-Bit Dynamic RAM(Fast Page Mode)(1M x 4位 動態(tài) RAM(快速頁面模式))
HYB314400BJ-50 1M x 4-Bit Dynamic RAM
HYB314400BJ-50- 1M x 4-Bit Dynamic RAM
HYB314400BJ-60 IC-DARLINGTON ARRAY 4UNIT RoHS Compliant: Yes
HYB 314400BJ-60 1M × 4-Bit Dynamic RAM(Fast Page Mode)(1M x 4位 動態(tài) RAM(快速頁面模式))
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