參數(shù)資料
型號: HYB314175BJL-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
中文描述: 256K X 16 EDO DRAM, 60 ns, PDSO40
封裝: 0.400 INCH, PLASTIC, SOJ-40
文件頁數(shù): 9/24頁
文件大?。?/td> 1307K
代理商: HYB314175BJL-60
HYB 314175BJ/BJL-50/-55/-60
3.3V 256K x 16 EDO-DRAM
Semiconductor Group
9
Hyper Page Mode (EDO) Read-Modify-Write Cycle
Hyper page mode read/write cycle
time
t
PRWC
58
58
68
ns
CAS precharge to WE delay time
t
CPWD
41
41
49
ns
CAS before RAS Refresh Cycle
CAS setup time
t
CSR
t
CHR
t
RPC
t
WRP
t
WRH
5
5
5
ns
CAS hold time
10
10
10
ns
RAS to CAS precharge time
5
5
5
ns
Write to RAS precharge time
10
10
10
ns
Write to RAS hold time
10
10
10
ns
CAS-before-RAS Counter Test Cycle
CAS precharge time
t
CPT
35
35
40
ns
Self Refresh Cycle (L-Version only)
RAS pulse width
t
RASS
t
RPS
t
CHS
100
100
100
μ
s
ns
RAS precharge time
95
110
110
CAS hold time
– 50 –
– 50 –
– 50 –
ns
Parameter
Symbol
Limit Values
Unit
Note
-50
-55
-60
min
max min
max min
max
相關(guān)PDF資料
PDF描述
HYB 314400BJ-50 1M × 4-Bit Dynamic RAM(Fast Page Mode)(1M x 4位 動態(tài) RAM(快速頁面模式))
HYB314400BJ-50 1M x 4-Bit Dynamic RAM
HYB314400BJ-50- 1M x 4-Bit Dynamic RAM
HYB314400BJ-60 IC-DARLINGTON ARRAY 4UNIT RoHS Compliant: Yes
HYB 314400BJ-60 1M × 4-Bit Dynamic RAM(Fast Page Mode)(1M x 4位 動態(tài) RAM(快速頁面模式))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB314265BJ-45 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256K x 16-Bit EDO-Dynamic RAM
HYB314265BJ-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256K x 16-Bit EDO-Dynamic RAM
HYB314265BJL-45 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256K x 16-Bit EDO-Dynamic RAM
HYB314265BJL-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256K x 16-Bit EDO-Dynamic RAM
HYB314400BJ-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM