參數(shù)資料
型號: HYB314400BJ-50-
廠商: SIEMENS AG
英文描述: 1M x 4-Bit Dynamic RAM
中文描述: 100萬× 4位動(dòng)態(tài)隨機(jī)存儲(chǔ)器
文件頁數(shù): 1/25頁
文件大小: 126K
代理商: HYB314400BJ-50-
Semiconductor Group
1
1998-10-01
1 048 576 words by 4-bit organization
0 to 70
°
C operating temperature
Fast Page Mode Operation
Performance:
Fast access and cycle time
Single + 3.3 V (
±
0.3 V) supply with a built-in VBB generator
Low power dissipation
max. 252 mWactive (-50 version)
max. 216 mWactive (-60 version)
Standby power dissipation:
7.2 mW max. standby (LVTTL)
3.6 mW max. standby (LVCMOS)
Output unlatched at cycle end allows two-dimensional chip selection
Read, write, read-modify write, CAS-before-RAS refresh, RAS-only refresh,
hidden refresh and test mode capability
All inputs and outputs LVTTL-compatible
1024 refresh cycles / 16 ms
Plastic Packages: P-SOJ-26/20-2 with 300 mil width
-50
-60
t
RAC
t
CAC
t
AA
t
RC
t
PC
RAS access time
50
60
ns
CAS access time
13
15
ns
Access time from address
25
30
ns
Read/Write cycle time
95
110
ns
Fast page mode cycle time
35
40
ns
1M
×
4-Bit Dynamic RAM
Advanced Information
HYB 314400BJ-50/-60
相關(guān)PDF資料
PDF描述
HYB314400BJ-60 IC-DARLINGTON ARRAY 4UNIT RoHS Compliant: Yes
HYB 314400BJ-60 1M × 4-Bit Dynamic RAM(Fast Page Mode)(1M x 4位 動(dòng)態(tài) RAM(快速頁面模式))
HYB 39S128160CT 128-Mbit(4banks × 2MBit × 16) Synchronous DRAM(128M(4列 × 2M位 × 16)同步動(dòng)態(tài)RAM)
HYB 39S128400CT 128-Mbit(4banks × 8MBit × 4) Synchronous DRAM(128M(4列 × 8M位 × 4)同步動(dòng)態(tài)RAM)
HYB 39S128800CT 128-Mbit(4banks × 4MBit × 8) Synchronous DRAM(128M(4列 × 4M位 × 8)同步動(dòng)態(tài)RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB314400BJ-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM
HYB314400BJL-50 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM
HYB314400BJL-60 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM
HYB314400BJL-70 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM
HYB314405BJ-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM