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參數(shù)資料
| 型號(hào)： | HYB314175BJL-60 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
| 中文描述： | 256K X 16 EDO DRAM, 60 ns, PDSO40 |
| 封裝： | 0.400 INCH, PLASTIC, SOJ-40 |
| 文件頁(yè)數(shù)： | 8/24頁(yè) |
| 文件大?。?/td> | 1307K |
| 代理商： | HYB314175BJL-60 |
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HYB 314175BJ/BJL-50/-55/-60
3.3V 256K x 16 EDO-DRAM
Semiconductor Group
8
Output buffer turn-off delay from
CAS
Output buffer turn-off delay from OE
t
OEZ
Data to OE low delay
t
OFF
0
13
0
13
0
15
ns
12
0
13
0
13
0
15
ns
12
t
DZO
t
CDD
t
ODD
0
–
0
–
0
–
ns
13
CAS high to data delay
10
–
10
–
13
–
ns
14
OE high to data delay
10
–
10
–
13
–
ns
14
Write Cycle
Write command hold time
t
WCH
t
WP
t
WCS
t
RWL
t
CWL
t
DS
t
DH
t
DZC
8
–
8
–
10
–
ns
Write command pulse width
8
–
8
–
10
–
ns
Write command setup time
0
–
0
–
0
–
ns
15
Write command to RAS lead time
13
–
13
–
15
–
ns
Write command to CAS lead time
13
–
13
–
15
–
ns
Data setup time
0
–
0
–
0
–
ns
16
Data hold time
8
–
8
–
10
–
ns
16
Data to CAS low delay
0
–
0
–
0
–
ns
13
Read-modify-Write Cycle
Read-write cycle time
t
RWC
t
RWD
t
CWD
t
AWD
t
OEH
118
–
122
–
138
–
ns
RAS to WE delay time
64
–
69
–
77
–
ns
15
CAS to WE delay time
27
–
27
–
32
–
ns
15
Column address to WE delay time
39
–
39
–
47
–
ns
15
OE command hold time
10
–
10
–
13
–
ns
Hyper Page Mode (EDO) Cycle
Hyper page mode cycle time
t
HPC
t
CP
t
CPA
t
COH
t
RAS
20
–
20
–
25
–
ns
CAS precharge time
8
–
8
–
10
–
ns
Access time from CAS precharge
–
27
–
27
–
32
ns
7
Output data hold time
5
–
5
–
5
–
ns
RAS pulse width in hyper page
mode
RAS hold time from CAS precharge
t
RHCP
50
200k
55
200k
60
200k
ns
27
–
27
–
32
–
ns
Parameter
Symbol
Limit Values
Unit
Note
-50
-55
-60
min
max min
max min
max
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB 314400BJ-50 | 1M × 4-Bit Dynamic RAM(Fast Page Mode)(1M x 4位 動(dòng)態(tài) RAM(快速頁(yè)面模式)) |
| HYB314400BJ-50 | 1M x 4-Bit Dynamic RAM |
| HYB314400BJ-50- | 1M x 4-Bit Dynamic RAM |
| HYB314400BJ-60 | IC-DARLINGTON ARRAY 4UNIT RoHS Compliant: Yes |
| HYB 314400BJ-60 | 1M × 4-Bit Dynamic RAM(Fast Page Mode)(1M x 4位 動(dòng)態(tài) RAM(快速頁(yè)面模式)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB314265BJ-45 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256K x 16-Bit EDO-Dynamic RAM |
| HYB314265BJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256K x 16-Bit EDO-Dynamic RAM |
| HYB314265BJL-45 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256K x 16-Bit EDO-Dynamic RAM |
| HYB314265BJL-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256K x 16-Bit EDO-Dynamic RAM |
| HYB314400BJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM |
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