參數(shù)資料
型號(hào): HYB314400BJ-50-
廠商: SIEMENS AG
英文描述: 1M x 4-Bit Dynamic RAM
中文描述: 100萬× 4位動(dòng)態(tài)隨機(jī)存儲(chǔ)器
文件頁數(shù): 8/25頁
文件大?。?/td> 126K
代理商: HYB314400BJ-50-
HYB 314400BJ-50/-60
3.3 V 1M
×
4 DRAM
Semiconductor Group
8
1998-10-01
Data to OE low delay
t
DZO
t
CDD
t
ODD
0
0
ns
13
CAS high to data delay
13
15
ns
14
OE high to data delay
13
15
ns
14
Write Cycle
Write command hold time
t
WCH
t
WP
t
WCS
t
RWL
t
CWL
t
DS
t
DH
t
DZC
8
10
ns
Write command pulse width
8
10
ns
Write command setup time
0
0
ns
15
Write command to RAS lead time
13
15
ns
Write command to CAS lead time
13
15
ns
Data setup time
0
0
ns
16
Data hold time
10
10
ns
16
Data to CAS low delay
0
0
ns
13
Read-Modify-Write Cycle
Read-write cycle time
t
RWC
t
RWD
t
CWD
t
AWD
t
OEH
131
150
ns
RAS to WE delay time
68
80
ns
15
CAS to WE delay time
31
35
ns
15
Column address to WE delay time
43
50
ns
15
OE command hold time
13
15
ns
Fast Page Mode Cycle
Fast page mode cycle time
t
PC
t
CP
t
CPA
t
RAS
t
RHCP
35
40
ns
CAS precharge time
10
10
ns
Access time from CAS precharge
30
35
ns
7
RAS pulse width
50
200k
60
200k
ns
CAS precharge to RAS delay
30
35
ns
Fast Page Mode Read-Modify-Write Cycle
Fast page mode read-write cycle time
t
PRWC
t
CPWD
71
80
ns
CAS precharge to WE
48
55
ns
AC Characteristics
(cont’d)
5, 6
T
A
= 0 to 70
°
C,
V
CC
= 3.3 V
±
0.3 V,
t
T
= 5 ns
Parameter
Symbol
Limit Values
Unit Note
-50
-60
min.
max. min.
max.
相關(guān)PDF資料
PDF描述
HYB314400BJ-60 IC-DARLINGTON ARRAY 4UNIT RoHS Compliant: Yes
HYB 314400BJ-60 1M × 4-Bit Dynamic RAM(Fast Page Mode)(1M x 4位 動(dòng)態(tài) RAM(快速頁面模式))
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB314400BJ-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM
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HYB314400BJL-60 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM
HYB314400BJL-70 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM
HYB314405BJ-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM