參數(shù)資料
型號: HYB314400BJ-50
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 1M x 4-Bit Dynamic RAM
中文描述: 1M X 4 FAST PAGE DRAM, 50 ns, PDSO20
封裝: 0.300 INCH, PLASTIC, SOJ-26
文件頁數(shù): 2/25頁
文件大?。?/td> 126K
代理商: HYB314400BJ-50
HYB 314400BJ-50/-60
3.3 V 1M
×
4 DRAM
Semiconductor Group
2
1998-10-01
The HYB 314400BJ is the new generation dynamic RAM organized as 1 048 576 words by 4-bit.
The HYB 314400BJ utilizes CMOS silicon gate process as well as advances circuit techniques to
provide wide operation margins, both internally and for the system user. Multiplexed address inputs
permit the HYB 314400BJ to be packed in a standard plastic P-SOJ-26/20 package. This package
size provides high system bit densities and is compatible with commonly used automatic testing and
insertion equipment. System oriented features include single + 3.3 V (
±
0.3 V ) power supply, direct
interfacing with high performance logic device families.
Ordering Information
Type
Ordering Code Package
Descriptions
HYB 314400BJ-50 on request
P-SOJ-26/20-2 300 mil 3.3 V DRAM (access time 50 ns)
HYB 314400BJ-60 on request
P-SOJ-26/20-2 300 mil 3.3 V DRAM (access time 60 ns)
相關(guān)PDF資料
PDF描述
HYB314400BJ-50- 1M x 4-Bit Dynamic RAM
HYB314400BJ-60 IC-DARLINGTON ARRAY 4UNIT RoHS Compliant: Yes
HYB 314400BJ-60 1M × 4-Bit Dynamic RAM(Fast Page Mode)(1M x 4位 動態(tài) RAM(快速頁面模式))
HYB 39S128160CT 128-Mbit(4banks × 2MBit × 16) Synchronous DRAM(128M(4列 × 2M位 × 16)同步動態(tài)RAM)
HYB 39S128400CT 128-Mbit(4banks × 8MBit × 4) Synchronous DRAM(128M(4列 × 8M位 × 4)同步動態(tài)RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB314400BJ-50- 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM
HYB314400BJ-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM
HYB314400BJL-50 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM
HYB314400BJL-60 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM
HYB314400BJL-70 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM