參數(shù)資料
型號(hào)： HYB314400BJ-50
廠商： SIEMENS A G
元件分類： DRAM
英文描述： 1M x 4-Bit Dynamic RAM
中文描述： 1M X 4 FAST PAGE DRAM, 50 ns, PDSO20
封裝： 0.300 INCH, PLASTIC, SOJ-26
文件頁(yè)數(shù)： 5/25頁(yè)
文件大小： 126K
代理商： HYB314400BJ-50
HYB 314400BJ-50/-60
3.3 V 1M
×
4 DRAM
Semiconductor Group
5
1998-10-01
Absolute Maximum Ratings
Operating temperature range ........................................................................................... 0 to 70
°
C
Storage temperature range.................................................................................... – 55 to + 150
°
C
Input/output voltage ............................................................................ – 1 to min (
V
CC
+ 0.5, 4.6) V
Power Supply voltage................................................................................................. – 1 to + 4.6 V
Data out current (short circuit) ............................................................................................... 50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
DC Characteristics
T
A
= 0 to 70
°
C,
V
SS
= 0 V,
V
CC
= 3.3 V
±
0.3 V,
t
T
= 5 ns
Parameter
Symbol
Limit Values
Unit Test
Condition
min.
max.
V
CC
+ 0.5 V
0.8
Input high voltage
V
IH
V
IL
V
OH
V
OL
V
OH
V
OL
I
I(L)
2.0
1
Input low voltage
TTL Output high voltage (
I
OUT
= – 2 mA)
TTL Output low voltage (
I
OUT
= 2 mA)
CMOS Output high voltage (
I
OUT
= – 100
μ
A)
CMOS Output low voltage (
I
OUT
= 100
μ
A)
Input leakage current, any input
(0 V <
V
IN
<
V
CC
+ 0.3 V, all other input = 0 V)
Output leakage current
(DO is disabled, 0 <
V
OUT
<
V
CC
)
Average
V
CC
supply current
– 1.0
V
1
2.4
–
V
1
–
V
CC
– 0.2 –
–
0.4
V
1
V
0.2
V
μ
A
– 10
10
1
I
O(L)
– 10
10
μ
A
1
-50 version
-60 version
I
CC1
–
–
70
60
mA
2, 3, 4
Standby
V
CC
supply current
(RAS = CAS = WE =
V
IH
)
Average
V
CC
supply current during RAS-only
refresh cycles
I
CC2
–
2
mA
-50 version
-60 version
I
CC3
–
–
70
60
mA
2, 4
Average
V
CC
supply current during fast page
mode operation
-50 version
-60 version
I
CC4
–
–
50
45
mA
2, 3, 4
相關(guān)PDF資料
PDF描述
HYB314400BJ-50- 1M x 4-Bit Dynamic RAM
HYB314400BJ-60 IC-DARLINGTON ARRAY 4UNIT RoHS Compliant: Yes
HYB 314400BJ-60 1M × 4-Bit Dynamic RAM(Fast Page Mode)(1M x 4位 動(dòng)態(tài) RAM(快速頁(yè)面模式))
HYB 39S128160CT 128-Mbit(4banks × 2MBit × 16) Synchronous DRAM(128M(4列 × 2M位 × 16)同步動(dòng)態(tài)RAM)
HYB 39S128400CT 128-Mbit(4banks × 8MBit × 4) Synchronous DRAM(128M(4列 × 8M位 × 4)同步動(dòng)態(tài)RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB314400BJ-50- 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM
HYB314400BJ-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM
HYB314400BJL-50 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM
HYB314400BJL-60 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM
HYB314400BJL-70 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM
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