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參數(shù)資料
| 型號： | HYB39L128160AC-8 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | 128-MBIT SYNCHRONOUS LOW-POWER DRAM |
| 中文描述： | 128 - Mbit同步低功率DRAM |
| 文件頁數(shù)： | 13/49頁 |
| 文件大?。?/td> | 938K |
| 代理商： | HYB39L128160AC-8 |
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HYB 39L128160AC/T
128-MBit 3.3V Mobile-RAM
INFINEON Technologies
13
2003-02
3UHFKDUJH&RPPDQG
There is also a separate precharge command available. When RAS and WE are low and CAS is
high at a clock edge, it triggers the precharge operation. Three address bits, BA0, BA1 and A10 are
used to define banks as shown in the following list. The precharge command can be imposed one
clock before the last data out for CAS latency = 2 and two clocks before the last data out for CAS
latency = 3. Writes require a time delay
W
WR
from the last data out to apply the precharge command.
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Once a burst read or write operation has been initiated, there are several methods used to terminate
the burst operation prematurely. These methods include using another Read or Write Command to
interrupt an existing burst operation, using a Precharge Command to interrupt a burst cycle and
close the active bank, or using the Burst Stop Command to terminate the existing burst operation
but leave the bank open for future Read or Write Commands to the same page of the active bank.
When interrupting a burst with another Read or Write Command care must be taken to avoid DQ
contention. The Burst Stop Command, however, has the fewest restrictions making it the easiest
method to use when terminating a burst operation before it has been completed. If a Burst Stop
command is issued during a burst write operation, then any residual data from the burst write cycle
will be ignored. Data that is presented on the DQ pins before the Burst Stop Command is registered
will be written to the memory.
A10
BA0
BA1
0
0
0
Bank 0
0
0
1
Bank 1
0
1
0
Bank 2
0
1
1
Bank 3
1
x
x
all Banks
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB39L128160AT | BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB39L128160AT-75 | 128-MBIT SYNCHRONOUS LOW-POWER DRAM |
| HYB39L128160AT-8 | 128-MBIT SYNCHRONOUS LOW-POWER DRAM |
| HYB39L128160AC-7.5 | HEX DIE SET,.100/.213/.429 |
| HYB39L256160AT-7.5 | BJAWBMSpecialty DRAMs Mobile-RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB39L128160AT | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB39L128160AT-7.5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:?128M (8Mx16) 133MHz 3-3-3 ? |
| HYB39L128160AT-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128-MBIT SYNCHRONOUS LOW-POWER DRAM |
| HYB39L128160AT-8 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128-MBIT SYNCHRONOUS LOW-POWER DRAM |
| HYB39L256160AC | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256 MBit Synchronous Low-Power DRAM |
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