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參數(shù)資料
| 型號： | HYB39L128160AC-8 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | 128-MBIT SYNCHRONOUS LOW-POWER DRAM |
| 中文描述： | 128 - Mbit同步低功率DRAM |
| 文件頁數(shù)： | 22/49頁 |
| 文件大?。?/td> | 938K |
| 代理商： | HYB39L128160AC-8 |
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HYB 39L128160AC/T
128-MBit 3.3V Mobile-RAM
INFINEON Technologies
22
2003-02
1. Bank Activate Command Cycle
2. Burst Read Operation
3. Read Interrupted by a Read
4. Read to Write Interval
4.1 Read to Write Interval
4.2 Minimum Read to Write Interval
4.3 Non-Minimum Read to Write Interval
5. Burst Write Operation
6. Write and Read Interrupt
6.1 Write Interrupted by a Write
6.2 Write Interrupted by Read
7. Burst Write & Read with Auto-Precharge
7.1 Burst Write with Auto-Precharge
7.2 Burst Read with Auto-Precharge
8. AC- Parameters
8.1 AC Parameters for a Write Timing
8.2 AC Parameters for a Read Timing
9. Mode Register Set
10. Power on Sequence and Auto Refresh (CBR)
11. Clock Suspension (using CKE)
11. 1 Clock Suspension During Burst Read CAS Latency = 2
11. 2 Clock Suspension During Burst Read CAS Latency = 3
11. 3 Clock Suspension During Burst Write CAS Latency = 2
11. 4 Clock Suspension During Burst Write CAS Latency = 3
12. Power Down Mode and Clock Suspend
13. Self Refresh ( Entry and Exit )
14. Auto Refresh ( CBR )
15. Random Column Read ( Page within same Bank)
15.1 CAS Latency = 2
15.2 CAS Latency = 3
16. Random Column Write ( Page within same Bank)
16.1 CAS Latency = 2
16.2 CAS Latency = 3
17. Random Row Read ( Interleaving Banks) with Precharge
17.1 CAS Latency = 2
17.2 CAS Latency = 3
18. Random Row Write ( Interleaving Banks) with Precharge
18.1 CAS Latency = 2
18.2 CAS Latency = 3
19. Precharge Termination of a Burst
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PDF描述 |
|---|---|
| HYB39L128160AT | BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB39L128160AT-75 | 128-MBIT SYNCHRONOUS LOW-POWER DRAM |
| HYB39L128160AT-8 | 128-MBIT SYNCHRONOUS LOW-POWER DRAM |
| HYB39L128160AC-7.5 | HEX DIE SET,.100/.213/.429 |
| HYB39L256160AT-7.5 | BJAWBMSpecialty DRAMs Mobile-RAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HYB39L128160AT | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB39L128160AT-7.5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:?128M (8Mx16) 133MHz 3-3-3 ? |
| HYB39L128160AT-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128-MBIT SYNCHRONOUS LOW-POWER DRAM |
| HYB39L128160AT-8 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128-MBIT SYNCHRONOUS LOW-POWER DRAM |
| HYB39L256160AC | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256 MBit Synchronous Low-Power DRAM |
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