參數資料
型號: HYB39S128400CT-75
廠商: INFINEON TECHNOLOGIES AG
英文描述: 128-MBit Synchronous DRAM
中文描述: 128兆位同步DRAM
文件頁數: 14/51頁
文件大?。?/td> 470K
代理商: HYB39S128400CT-75
HYB 39S128400/800/160CT(L)
128-MBit Synchronous DRAM
INFINEON Technologies
14
9.01
Burst Termination
Once a burst read or write operation has been initiated, there are several methods in which to
terminate the burst operation prematurely. These methods include using another Read or Write
Command to interrupt an existing burst operation, use a Precharge Command to interrupt a burst
cycle and close the active bank, or using the Burst Stop Command to terminate the existing burst
operation but leave the bank open for future Read or Write Commands to the same page of the
active bank. When interrupting a burst with another Read or Write Command care must be taken to
avoid DQ contention. The Burst Stop Command, however, has the fewest restrictions making it the
easiest method to use when terminating a burst operation before it has been completed. If a Burst
Stop command is issued during a burst write operation, then any residual data from the burst write
cycle will be ignored. Data that is presented on the DQ pins before the Burst Stop Command is
registered will be written to the memory.
Bank Selection by Address Bits
A10
BA0
BA1
0
0
0
Bank 0
0
0
1
Bank 1
0
1
0
Bank 2
0
1
1
Bank 3
1
x
x
all Banks
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相關代理商/技術參數
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