參數(shù)資料
型號: HYB39S128400CT-75
廠商: INFINEON TECHNOLOGIES AG
英文描述: 128-MBit Synchronous DRAM
中文描述: 128兆位同步DRAM
文件頁數(shù): 23/51頁
文件大?。?/td> 470K
代理商: HYB39S128400CT-75
HYB39S128400/800/160CT(L)
128-MBit Synchronous DRAM
INFINEON Technologies
24
3. Read Interrupted by a Read
4. Read to Write Interval
4.1 Read to Write Interval
SPT03713
CLK
Read A
T0
T1
T2
T3
T4
T5
T6
T7
T8
Command
DOUT A0
DOUT B0
DOUT B1 DOUT B2
NOP
NOP
NOP
NOP
NOP
NOP
NOP
latency = 2
, DQ’s
CK2
t
CK3
latency = 3
t
, DQ’s
(Burst Length = 4, CAS latency = 2, 3)
CAS
CAS
Read B
DOUT B3
DOUT B1
DOUT A0
DOUT B0
DOUT B3
DOUT B2
Commands = 4 + 1 = 5 cycles
Minimum delay between the Read and Write
DOUT A0
DQ’s
(Burst Length = 4, CAS latency = 3)
DQMx
Command
CLK
NOP
Read A
T0
T1
NOP
NOP
T2
T3
the Write Command
Must be Hi-Z before
DIN B0
DIN B1
SPT03787
DIN B2
DQW
NOP
DQZ
t
NOP
t
T4
T5
Write B
NOP
T6
T7
NOP
T8
"H" or "L"
Write latency
of DQMx
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