- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370792 > HYB39S16400CT-10 (SIEMENS A G) 16 MBit Synchronous DRAM PDF資料下載
參數(shù)資料
| 型號： | HYB39S16400CT-10 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 16 MBit Synchronous DRAM |
| 中文描述： | 4M X 4 SYNCHRONOUS DRAM, 7 ns, PDSO50 |
| 封裝： | 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP-50 |
| 文件頁數(shù)： | 12/19頁 |
| 文件大?。?/td> | 101K |
| 代理商： | HYB39S16400CT-10 |
HYB 39S16400/800/160CT-8/-10
16 MBit Synchronous DRAM
Semiconductor Group
12
1998-10-01
Burst Termination
Once a burst read or write operation has been initiated, there are several methods in which to
terminate the burst operation prematurely. These methods include using another Read or Write
Command to interrupt an existing burst operation, use a Precharge Command to interrupt a burst
cycle and close the active bank, or using the Burst Stop Command to terminate the existing burst
operation but leave the bank open for future Read or Write Commands to the same page of the
active bank. When interrupting a burst with another Read or Write Command care must be taken to
avoid DQ contention. The Burst Stop Command, however, has the fewest restrictions making it the
easiest method to use when terminating a burst operation before it has been completed. If a Burst
Stop command is issued during a burst write operation, then any residual data from the burst write
cycle will be ignored. Data that is presented on the DQ pins before the Burst Stop Command is
registered will be written to the memory.
Power Up Procedure
All
V
DD
and
V
DDQ
must reach the specified voltage no later than any of input signal voltages. An
initial pause of 200
μ
sec is required after power on. All banks have to be precharged and a minimum
of 8 auto refresh cycles are required prior to the mode register set operation.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB39S16800CT-10 | 16 MBit Synchronous DRAM |
| HYB39S256160T | 256 MBit Synchronous DRAM(256M位同步動態(tài)RAM) |
| HYB39S256800 | 256 MBit Synchronous DRAM(256M位同步動態(tài)RAM) |
| HYB39S256400DC-6 | 256 MBit Synchronous DRAM |
| HYB39S256400DC-7 | 256 MBit Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB39S16400CT-8 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16 MBit Synchronous DRAM |
| HYB39S16400T-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 SDRAM |
| HYB39S16400T-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 SDRAM |
| HYB39S164400 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16 MBit Synchronous DRAM |
| HYB39S16800AT-10 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16 MBit Synchronous DRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。