參數(shù)資料
型號(hào)： HYB514405BJ-60
廠商： SIEMENS A G
元件分類： DRAM
英文描述： RES 1.3K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA
中文描述： 1M X 4 EDO DRAM, 60 ns, PDSO20
封裝： 0.300 INCH, PLASTIC, SOJ-20
文件頁數(shù)： 5/25頁
文件大?。?/td> 1361K
代理商： HYB514405BJ-60
Semiconductor Group
5
HYB 514405BJ/BJL-50/-60/-70
1M x 4 EDO - DRAM
Absolute Maximum Ratings
Operating temperature range ............................................................................................0 to 70 C
Storage temperature range......................................................................................– 55 to + 150 C
Input/output voltage ........................................................................................................– 1 to + 7 V
Power Supply voltage.....................................................................................................– 1 to + 7 V
Data out current (short circuit) ................................................................................................50 mA
Note:
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
T
A
= 0 to 70 C,
V
SS
= 0 V,
V
CC
= 5 V
±
10 %,
t
T
= 2 ns
Parameter
Symbol
Limit Values
Unit Test
Condition
min.
max.
V
CC
+ 0.5 V
0.8
Input high voltage
V
ih
V
il
V
oh
V
ol
I
I(L)
2.4
1)
Input low voltage
Output high voltage (
I
OUT
= – 5 mA)
Output low voltage (
I
OUT
= 4.2 mA)
Input leakage current, any input
(0 V <
V
in
< 7, all other input = 0 V)
Output leakage current
(DO is disabled, 0 <
V
OUT
<
V
CC
)
Average
V
CC
supply current
– 1.0
V
1)
2.4
–
V
1)
–
0.4
V
μ
A
1)
– 10
10
1)
I
o(L)
– 10
10
μ
A
1)
-50 version
-60 version
-70 version
I
CC1
–
–
–
120
110
100
mA
2) 3)4)
Standby
V
CC
supply current
(RAS = CAS = WE =
V
ih
)
Average
V
CC
supply current during RAS-only
refresh cycles
I
CC2
–
2
mA
–
-50 version
-60 version
-70 version
I
CC3
–
–
–
120
110
100
mA
2)4)
Average
V
CC
supply current during hyper page
mode(EDO) operation
-50 version
-60 version
-70 version
Standby
V
CC
supply current
(RAS = CAS = WE =
V
CC
– 0.2 V)
I
CC4
–
–
–
100
90
80
mA
2) 3)4)
I
CC5
–
1
200
mA
μ
A
1)
L-version
相關(guān)PDF資料
PDF描述
HYB514405BJ-50 1M x 4-Bit Dynamic RAM
HYB514405BJL-50 1M x 4-Bit Dynamic RAM
HYB514405BJL-60 1M x 4-Bit Dynamic RAM
HYB514405BJL-70 1M x 4-Bit Dynamic RAM
HYB514800BJ-80 512kx8-Bit Dynamic RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB514405BJ-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM
HYB514405BJL-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM
HYB514405BJL-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM
HYB514405BJL-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM
HYB514800BJ 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:512kx8-Bit Dynamic RAM
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