參數資料
型號: HYB514405BJ-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: RES 1.3K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA
中文描述: 1M X 4 EDO DRAM, 60 ns, PDSO20
封裝: 0.300 INCH, PLASTIC, SOJ-20
文件頁數: 8/25頁
文件大?。?/td> 1361K
代理商: HYB514405BJ-60
Semiconductor Group
8
HYB 514405BJ/BLJ-50/-60/-70
1M x 4 EDO - DRAM
Write command to RAS lead time
t
RWL
Write command to CAS lead time
t
CWL
Data setup time
13
15
17
ns
13
15
17
ns
t
DS
t
DH
0
0
0
ns
16
Data hold time
8
10
12
ns
16
Read-modify-Write Cycle
Read-write cycle time
t
RWC
t
RWD
t
CWD
t
AWD
118
138
162
ns
RAS to WE delay time
64
77
89
ns
15
CAS to WE delay time
27
32
36
ns
15
Column address to WE delay
time
39
47
54
ns
15
OE command hold time
t
OEH
10
13
15
ns
Hyper Page Mode (EDO) Cycle
Hyper page mode (EDO) cycle
time
t
HPC
20
25
30
ns
CAS precharge time
t
CP
t
CPA
8
10
10
ns
Access time from CAS
precharge
27
32
37
ns
7
Output data hold time
t
COH
t
RAS
5
5
5
ns
RAS pulse width in hyper page
mode
50
200k
60
200k
70
200k
ns
CAS precharge to RAS Delay
t
RHCP
27
32
37
ns
Hyper Page Mode (EDO) Read-
modify-Write Cycle
Hyper page mode (EDO) read-
write cycle time
t
PRWC
58
68
77
ns
CAS precharge to WE
t
CPWD
41
49
56
ns
AC Characteristics
(cont’d)
5)6)
T
A
= 0 to 70 C,
V
CC
= 5 V
±
10 %,
t
T
= 2 ns
Parameter
Symbol
Limit Values
Unit
Note
-50
-60
-70
min.
max. min.
max. min.
max.
相關PDF資料
PDF描述
HYB514405BJ-50 1M x 4-Bit Dynamic RAM
HYB514405BJL-50 1M x 4-Bit Dynamic RAM
HYB514405BJL-60 1M x 4-Bit Dynamic RAM
HYB514405BJL-70 1M x 4-Bit Dynamic RAM
HYB514800BJ-80 512kx8-Bit Dynamic RAM
相關代理商/技術參數
參數描述
HYB514405BJ-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM
HYB514405BJL-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM
HYB514405BJL-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM
HYB514405BJL-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM
HYB514800BJ 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:512kx8-Bit Dynamic RAM