參數(shù)資料
型號(hào): HYE18P32160AC-125
廠商: INFINEON TECHNOLOGIES AG
英文描述: M39012 MIL RF CONNECTOR
中文描述: 32M的同步突發(fā)的CellularRAM
文件頁(yè)數(shù): 43/53頁(yè)
文件大?。?/td> 1426K
代理商: HYE18P32160AC-125
Data Sheet
43
V2.0, 2003-12-16
HYE18P32160AC(-/L)9.6/12.5/15
32M Synchronous Burst CellularRAM
Functional Description
2.8
Synchronous Mode
[Disclaimer]
WAIT signal of all synchronous timings below is shown in the case of WC=0 (at delay) and WP=0 (active low) though it is not
default state.
In synchronous mode, read and write operations are synchronized to the clock. Refresh cycles or page boundary
crossings are indicated to the host system by asserting the WAIT signal which in turn stalls the processor. WAIT
polarity, WAIT timing, synchronicity to the falling/rising clock edge, the burst length and further options are user
configurable and can be programmed via the bus configuration register (BCR).
2.8.1
Refer to
Section 2.7.1
and
Section 2.7.2
. All the timing and parameters are same as described in read operation
for NOR-Flash-Type mode.
Synchronous Read Mode Including Burst Suspend
2.8.2
In synchronous write mode, UB and LB are used as byte control of data input mask. At the rising edge of CLK,
their state is sampled and determined whether the coupled byte (DQ15-8 for UB and DQ7-0 for LB) is updated by
input data. Proper set-up time and hold time to CLK should be met. As discussed in
Section 2.4
, synchronous
burst write is always configured as continuous and no wrap, so that it has to be terminated by CS high state after
the burst fulfills required length of cycles.
Synchronous Write Mode
Figure 25
Synchronous Write Burst
Hi-z
Don't Care
CS
OE
UB, LB
WE
DQ15-DQ0
t
HD
A20-A0
ADR
CLK
WAIT
ADV
t
SP
t
CSS
t
CLK
t
CKH
t
CKL
t
HD
t
HD
in case the burst write access collides
with an ongoing refresh cycle additional
WAIT cycles might be inserted
D0
D1
D2
D3
D4
t
WZ
t
CBPH
t
WK
t
CWT
Latency Code2
t
SP
t
HD
(mask)
t
VP
t
VPH
t
HD
t
SP
t
SP
t
SP
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