參數(shù)資料
型號： HYE18P32160AC-125
廠商： INFINEON TECHNOLOGIES AG
英文描述： M39012 MIL RF CONNECTOR
中文描述： 32M的同步突發(fā)的CellularRAM
文件頁數(shù)： 8/53頁
文件大小： 1426K
代理商： HYE18P32160AC-125
Data Sheet
8
V2.0, 2003-12-16
32M Synchronous Burst CellularRAM
CellularRAM
HYE18P32160AC(-/L)9.6
HYE18P32160AC(-/L)12.5
HYE18P32160AC(-/L)15
1
Overview
1.1
Features
High density (1T1C-cell) Synchronous 32-Mbit Pseudo-Static RAM
Designed for cell phone applications (CellularRAM)
Functional-compatible (Asynchronous mode) to conventional low power asynchronous SRAM devices
Organization 2M
×
16
Refresh-free operation
1.8 V single power supply (
V
DD
and
V
DDQ
)
Low power optimized design
–
I
STANDBY
= 90
μ
A (for L-part
1)
) or 120uA (for standard part), data retention mode
–
I
DPD
= < 25
μ
A (32M), non-data retention mode
Low power features (partly adopted from the JEDEC standardized low power SDRAM specifications)
– Temperature Compensated Self-Refresh (TCSR)
– Partial Array Self-Refresh (PASR)
– Deep Power Down Mode (DPD)
User configurable interface supporting three different access protocols (values from 9.6 part)
– asynchronous SRAM protocol, 70 ns random access cycle time, 20 ns page mode (read only) cycle time
– NOR-Flash burst protocol, 70 ns write cycle time, 104 MHz burst mode read cycle
– synchronous (bi-directional) interface protocol, 70 ns random cycle time, 104 MHz burst mode read/write
cycle
In NOR-Flash burst or in synchronous mode the additional user settings are featured
– programmable fixed burst length of 4/8/16 words or continuous burst mode
– programmable latency modes to adjust the desired burst frequency
– wrap mode function
– programmable WAIT signal polarity and timing
Byte read/write control by UB/LB (Asynchronous mode and in synchronous burst read)
Synchronous Data Input Mask function supported by UB/LB in synchronous burst write mode
Wireless operating temperature range from -25 °C to +85 °C
P-VFBGA-54 chip-scale package (9
×
6 ball grid)
Table 1
HYE18P32160AC
Maximum Input CLK frequency
(MHz)
Product Selection
L9.6
1)
1) Contact Factory
-9.6
L12.5
1)
-12.5
L15
1)
-15
Lat = 2
Lat = 3
66
104
70 ns
50
80
40
66
Min. Random Cycle time (
t
RC
)
Stand-by current (
I
CC2
)
70
ns
85 ns
90
μ
A
120
μ
A
90
μ
A
120
μ
A
90
μ
A
120
μ
A
H Y E 1 8 P 3 2 1 6 0 A C
32M (x16 Org)
Extended Temp. part
Chip Scale Package
Design Revision number
Device Type
0: standard (54-ball)
V
DD
= 1.8 V typ.
PSRAM product
相關(guān)PDF資料
PDF描述
HYE18P32160AC-15 M39012 MIL RF CONNECTOR
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HYE18P32161AC 32M Asynchronous/Page CellularRAM
HYE18P32161ACL70 JT 23C 21#20 2#16 SKT PLUG
HYE18P32161ACL85 Circular Connector; MIL SPEC:MIL-DTL-38999 Series II; Body Material:Metal; Series:JT; No. of Contacts:11; Connector Shell Size:18; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight RoHS Compliant: No
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYE18P32160AC-15 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:32M Synchronous Burst CellularRAM
HYE18P32160AC-96 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:32M Synchronous Burst CellularRAM
HYE18P32160ACL125 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:32M Synchronous Burst CellularRAM
HYE18P32160ACL15 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:32M Synchronous Burst CellularRAM
HYE18P32160ACL96 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:32M Synchronous Burst CellularRAM
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