參數(shù)資料
型號(hào): HYE18P32160ACL96
廠商: INFINEON TECHNOLOGIES AG
元件分類: 圓形連接器
英文描述: Circular Connector; MIL SPEC:MIL-DTL-38999 Series II; Body Material:Metal; Series:JT; No. of Contacts:11; Connector Shell Size:18; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight RoHS Compliant: No
中文描述: 32M的同步突發(fā)的CellularRAM
文件頁數(shù): 41/53頁
文件大?。?/td> 1426K
代理商: HYE18P32160ACL96
Data Sheet
41
V2.0, 2003-12-16
HYE18P32160AC(-/L)9.6/12.5/15
32M Synchronous Burst CellularRAM
Functional Description
The programming of control register in NOR-Flash-type mode is performed in the similar manner as asynchronous
write with ADV control except CRE being held high during the code input operation. Note that CRE has to meet
set-up (
t
CRS
) and hold time (
t
CRH
) of valid state (= High) in reference to ADV rising edge. ADV may be kept low for
entire operation or go high to latch valid control register information at its rising edge.
Figure 24
Asynchronous Write To Control Register in NOR-Flash Mode
Table 16
Parameter
Timing Parameters - Asynchronous Write With ADV Control
Symbol
9.6, 12.5
Min.
25
70
0
10
5
70
8
8
70
70
70
40
10
5
15
Unit
Notes
Max.
Min.
35
85
0
10
5
85
10
10
85
85
85
45
15
8
Max.
WE high to CLK valid
Write cycle time
Address setup time to write start
Address setup to ADV high
Address hold from ADV high
Address to end of write
ADV pulse width high
ADV pulse width low
ADV setup to end of write
CS to end of write
UB/LB to end of write
Write pulse width low
Write pulse width high
CS high time (synch_read)
t
CKA
t
WC
t
AS
t
AVS
t
AVH
t
AW
t
VPH
t
VP
t
VS
t
CW
t
BW
t
WP
t
WPH
t
CBPH
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Don't Care
A20-A0
opcode
CS
WE
UB, LB
OE
DQ15-DQ0
t
CW
t
WP
t
VP
t
VS
ADV
ADDRESS
t
VPH
t
AVS
t
AVH
t
WPH
t
CKA
t
WR
t
WC
CRE
A19
t
CRS
t
CRH
0(RCR), 1(BCR)
t
AW
CLK
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