參數(shù)資料
型號: HYS 64V32220GCDL
廠商: SIEMENS AG
英文描述: 3.3V SDRAM Modules(3.3V SDRAM 模塊)
中文描述: 3.3V的內(nèi)存模塊(3.3V的內(nèi)存模塊)
文件頁數(shù): 6/16頁
文件大小: 100K
代理商: HYS 64V32220GCDL
HYS64V32220GCDL
144 pin SO-DIMM SDRAM Modules
Infineon Technologies
6
12.99
T
Operating Currents per memory bank
(T
A
= 0 to 70
o
C, Vdd = 3.3V
±
0.3V
(Recommended Operating Conditions unless otherwise noted)
Notes:
1. These parameters depend on the cycle rate. These values are measured at 100 MHz operation frequency.
Input signals are changed once during tck, excepts for ICC6 and for standby currents when tck=infinity.
2. These parameters are measured with continuous data stream during read access and all DQ toggling. CL=3
and BL=4 is assumed and the VDDQ current is excluded.
Parameter & Test Condition
Symb.
32Mx64
256Mbyte
Note
OPERATING CURRENT
trc=trcmin., tck=tckmin.
Ouputs open, Burst Length = 4, CL=3
All banks operated in random access,
all banks operated in ping-pong manner
to maximize gapless data access
ICC1
960
mA
1
PRECHARGE STANDBY CURRENT
in Power Down Mode
CS =VIH (min.), CKE<=Vil(max)
tck = min.
ICC2P
12
mA
1
tck = Infinity
ICC2PS
8
mA
1
PRECHARGE STANDBY CURRENT
in Non-Power Down Mode
CS = VIH (min.), CKE>=Vih(min)
tck = min.
ICC2N
280
mA
1
tck = Infinity
ICC2NS
40
mA
1
NO OPERATING CURRENT
tck = min., CS = VIH(min),
active state ( max. 4 banks)
CKE>=VIH(min.)
ICC3N
360
mA
1
CKE<=VIL(max.)
ICC3P
64
mA
1
BURST OPERATING CURRENT
tck = min.,
Read command cycling
ICC4
960
mA
1,2
AUTO REFRESH CURRENT
tck = min.,
Auto Refresh command cycling
ICC5
1360
mA
1
SELF REFRESH CURRENT
Self Refresh Mode, CKE=0.2V
ICC6
6.4
mA
1
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