參數(shù)資料
型號: IC42S81600-8T(G)
英文描述: 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
中文描述: 4(2)M中的x 8(16)位× 4銀行(128 - Mbit的)同步動態(tài)RAM
文件頁數(shù): 45/69頁
文件大?。?/td> 1118K
代理商: IC42S81600-8T(G)
IC42S81600/IC42S81600L
IC42S16800/IC42S16800L
Integrated Circuit Solution Inc.
5
DR023-0E 6/11/2004
PIN FUNCTIONS
Symbol
Type
Function (In Detail)
CLK
Input Pin
Master Clock: Other inputs signals are referenecd to the CLK rising edge
CKE
Input Pin
Clock Enable: CKE HIGH activates, and CKE LOW deactivates internal
clock signals,device input buffers and output drivers. Deactivating the clock
provides PRECHARGE POWER-DOWN and SELF REFRESH operation
(all banks idle), or ACTIVE POWER-DOWN (row ACTIVE in any bank).
CS
Input Pin
Chip Select: CS enables (registered LOW) and disables (registered HIGH)
the command decoder. All commands are masked when CS is registered
HIGH. CS provides for external bank selection on systems with multiple
banks. CS is considered part of the command code.
RAS, CAS, WE
Input Pin
Command Inputs:
RAS, CAS and WE (along with CS) define the command
being entered.
A0-A11
Input Pin
Address Inputs: Provide the row address for ACTIVE commands, and the
column address and AUTO PRECHARGE bit for READ/WRITE
commands, to select one location out of the memory array in the respective
bank. The row address is specified by A0-A11. The column address is
specified by A0-A9 (IC42S81600) / A0-A8 (IC42S16800)
BA0,BA1
Input Pin
Bank Address Inputs: BA0 and BA1 define to which bank an ACTIVE,
READ, WRITE or PRECHARGE command is being applied.
DQM, UDQM ,LDQM
Input Pin
Din Mask / Output Disable: When DQM is high in burst write, Din for the
current cycle is masked. When DQM is is high in burst read, Dout is
disable at the next but one cycle.
DQ0 to DQ15
I/O Pin
Data Input / Output: Data bus.
VDD, VSS
Power Supply Pin
Power Supply for the memory array and peripheral circuitry.
VDDQ, VSSQ
Power Supply Pin
Power Supply are supplied to the output buffers only.
相關(guān)PDF資料
PDF描述
IC42S81600-8TG 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S81600-8TI 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S81600L-6T 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S81600L-6T(G) 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S81600L-6TG 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IC42S81600-8TI 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S81600-8TI(G) 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S81600-8TIG 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S81600L 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S81600L-6T 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM