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參數(shù)資料
| 型號： | IC42S81600-8T(G) |
| 英文描述： | 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 4（2）M中的x 8（16）位× 4銀行（128 - Mbit的）同步動態(tài)RAM |
| 文件頁數(shù)： | 56/69頁 |
| 文件大?。?/td> | 1118K |
| 代理商： | IC42S81600-8T(G) |
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IC42S81600/IC42S81600L
IC42S16800/IC42S16800L
6
Integrated Circuit Solution Inc.
DR023-0E 6/11/2004
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameters
Rating
Unit
VDD
Supply Voltage (with respect to VSS)
–0.5 to +4.6
V
VDDQ
Supply Voltage for Output (with respect to VSSQ)
–0.5 to +4.6
V
VI
Input Voltage (with respect to VSS)
–0.5 to VDD+0.5
V
VO
Output Voltage (with respect to VSSQ)
–1.0 to VDDQ+0.5
V
IO
Short circuit output current
50
mA
PD
Power Dissipation (TA = 25 °C)
1W
TOPT
Operating Temperature
Commercial
0 to +70
°C
Industrial
-40 to +85
TSTG
Storage Temperature
–65 to +150
°C
Notes:
1. Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent
damage. The device is not meant to be operated under conditions outside the limits described in the
operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended
periods may affect device reliability.
DC RECOMMENDED OPERATING CONDITIONS
(At unless otherwise noted)
Symbol
Parameter
Min.
Typ.
Max.
Unit
VDD
Supply Voltage
3.0
3.3
3.6
V
VDDQ
Supply Voltage for DQ
3.0
3.3
3.6
V
VIH
High Level Input Voltage (all Inputs)
2.0
—
VDD + 1.2
V
VIL
Low Level Input Voltage (all Inputs)
-1.2
—
+0.8
V
Notes:
1. All voltages are referenced to VSS =0V
2. VIH(max) for pulse width with
≤ 3ns of duration
3. VIL(min) for pulse width with
≤ 3ns of duration
CAPACITANCE CHARACTERISTICS
(At VDD = VDDQ = 3.3 ± 0.3V, VSS = VSSQ = 0V , unless otherwise noted)
Symbol
Parameter
Min.
Max.
Unit
-6
-7/-8
CIN
Input Capacitance, address & control pin
2.5
3.8
5.0
pF
CCLK
Input Capacitance, CLK pin
2.5
3.5
4.0
pF
CI/O
Data Input/Output Capacitance
4.0
6.5
pF
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| IC42S81600-8TG | 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S81600-8TI | 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S81600L-6T | 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S81600L-6T(G) | 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IC42S81600-8TI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S81600-8TI(G) | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S81600-8TIG | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S81600L | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S81600L-6T | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
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