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參數(shù)資料
| 型號(hào)： | IC42S81600-8T(G) |
| 英文描述： | 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 4（2）M中的x 8（16）位× 4銀行（128 - Mbit的）同步動(dòng)態(tài)RAM |
| 文件頁(yè)數(shù)： | 67/69頁(yè) |
| 文件大小： | 1118K |
| 代理商： | IC42S81600-8T(G) |
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IC42S81600/IC42S81600L
IC42S16800/IC42S16800L
Integrated Circuit Solution Inc.
7
DR023-0E 6/11/2004
DC CHARACTERISTICS 1
(At VDD = VDDQ = 3.3 ± 0.3V, VSS = VSSQ = 0V , unless otherwise noted)
Symbol Parameter
Test Condition
Organization
Max.
Unit
-6
-7
-8
ICC1(1)
Operating Current
One Bank active,
x8
120
100
mA
CL=3, BL=1
x16
140
120
mA
tRC = tRC (min.)
tCLK = tCLK (min.)
ICC2P
Precharge Standby Current CKE
≤ VIL (MAX)
x8/x16
2
mA
(In Power-Down Mode)
tCK = 15 ns
ICC2PS
CKE
≤ VIL (MAX)
x8/x16
1
mA
CLK
≤ VIL (MAX)
ICC2N(2) Precharge Standby Current CS
≥ VCC -0.2V
x8/x16
25
mA
(In Non Power-Down Mode) CKE
≥ VIH (MIN)
tCK = 15 ns
ICC2NS
CS
≥ VCC -0.2V
x8/x16
15
mA
CKE
≥ VIH (MIN)
CKE
≤ VIL (MAX)
All input signals are stable.
ICC3N(2) Active Standby Current
CS
≥ VCC -0.2V
x8/x16
30
mA
(In Non Power-Down Mode) CKE
≥ VIH (MIN)
tCK = 15 ns
ICC3NS
CS
≥ VCC -0.2V
x8/x16
20
mA
CKE
≥ VIH (MIN)
CKE
≤ VIL (MAX)
All input signals are stable.
ICC4
Operating Current
All Banks active
x8
170
120
mA
(In Burst Mode)
BL=4
tCK = tCK (MIN)
x16
180
130
mA
CL latency = 3
ICC5
Auto-Refresh Current
tRC = tRC (MIN)
x8/x16
180
1
60
1
60
mA
tCLK = tCLK (MIN)
ICC6(3, 4)
Self-Refresh Current
CKE
≤ 0.2V
x8/x16, normal
2
mA
x8/x16, Low power
0.8
mA
Notes:
1. ICC(max) is specified at the output open condition.
2. Input signals are changed one time during 30ns.
3. Normal version: IC42S81600/IC42S16800
4. Low power version: IC42S81600L/IC42S16800L
DC CHARACTERISTICS 2
(VDD = 3.3 ± 0.3V, VSS = VSSQ = 0V , unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Max
Unit
Input Leakage Current (Inputs)
II (L)
0
≤ VIN ≤ VDD (MAX)
–10
10
A
Pins not under test = 0V
Output Leakage Current (I/O pins)
IO (L)
0
≤ VOUT ≤ VDD (MAX)
–5
5
A
DQ# in H - Z., DOUT is disabled
High Level Output Voltage
VOH (DC) IOH = –2 mA
2.4
—
V
Low Level Output Voltage
VOL (DC)
IOL = 2 mA
—
0.4
V
相關(guān)PDF資料 |
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| IC42S81600-8TG | 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S81600-8TI | 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S81600L-6T | 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S81600L-6T(G) | 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IC42S81600-8TI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S81600-8TI(G) | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S81600-8TIG | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S81600L | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S81600L-6T | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
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