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| 型號： | IDT7140 |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | High Speed 1K X 8 Dual-Port Static RAM(高速1K×8雙端口靜態(tài)RAM) |
| 中文描述： | 高速每1000 × 8雙端口靜態(tài)存儲器（高速每1000 × 8雙端口靜態(tài)RAM）的 |
| 文件頁數(shù)： | 12/18頁 |
| 文件大小： | 214K |
| 代理商： | IDT7140 |
IDT7130SA/LA AND IDT7140SA/LA
HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM
MILITARY, INDUSTRIAL AND COMMERCIAL TEMPERATURE RANGES
6.01
12
AC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(7,9)
8
M824S258M824S30 7132158M824S4
NOTES:
1. PLCC, TQFP and STQFP packages only.
2. Port-to-port delay through RAM cells from the writing port to the reading port, refer to “Timing Waveform of Write with Port -to-Port Read and
BUSY
."
3. To ensure that the earlier of the two ports wins.
4. t
BDD
is a calculated parameter and is the greater of 0, t
WDD
– t
WP
(actual) or t
DDD
– t
DW
(actual).
5. To ensure that a write cycle is inhibited on port 'B' during contention on port 'A'.
6. To ensure that a write cycle is completed on port 'B' after contention on port 'A'.
7. “X” in part numbers indicates power rating (S or L).
8. Industrial temperature: for other speeds, packages and powers contact your sales office.
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