參數(shù)資料
型號： IDT7140
廠商： Integrated Device Technology, Inc.
英文描述： High Speed 1K X 8 Dual-Port Static RAM(高速1K×8雙端口靜態(tài)RAM)
中文描述： 高速每1000 × 8雙端口靜態(tài)存儲器（高速每1000 × 8雙端口靜態(tài)RAM）的
文件頁數(shù)： 4/18頁
文件大?。?/td> 214K
代理商： IDT7140
IDT7130SA/LA AND IDT7140SA/LA
HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM
MILITARY, INDUSTRIAL AND COMMERCIAL TEMPERATURE RANGES
6.01
4
ABSOLUTE MAXIMUM RATINGS
(1)
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RECOMMENDED
DC OPERATING CONDITIONS
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
(1,2)
DC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(V
CC
= 5.0V
±
10%)
NOTES:
1. This parameter is determined by device characterization but is not
production tested.
2. 3dV references the interpolated capacitance when the input and output
signals switch from 0V to 3V or from 3V to 0V.
CAPACITANCE
(T
A
= +25
°
C, f = 1.0MHz)
STQFP and TQFP Packages Only
NOTE:
1. At Vcc
≤
2.0V leakages are undefined.
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of the specification is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. V
TERM
must not exceed Vcc + 10% for more than 25% of the cycle time
or 10ns maximum, and is limited to < 20mA for the period of V
TERM
> Vcc
+ 10%.
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NOTES:
1. V
IL
(min.) > -1.5V for pulse width less than 10ns.
2. V
TERM
must not exceed Vcc + 10%.
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NOTES:
1. This is the parameter T
A
.
2. Industrial temperature: for specific speeds, packages and powers contact
your sales office.
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IDT7142LA100C HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT714016SA10BF 制造商:Integrated Device Technology Inc 功能描述:
IDT7140LA100C 功能描述:IC SRAM 8KBIT 100NS 48DIP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，同步 存儲容量:1.125M（32K x 36） 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA（17x17） 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8
IDT7140LA100CB 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 32KBIT 100NS SB48
IDT7140LA100J 功能描述:IC SRAM 8KBIT 100NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR)
IDT7140LA100J8 功能描述:IC SRAM 8KBIT 100NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR)
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