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參數(shù)資料
| 型號： | IDT71P73204 |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | 18Mb Pipelined DDR⑩II SRAM Burst of 4 |
| 中文描述： | 35.7流水線的DDR II SRAM的突發(fā)⑩4 |
| 文件頁數(shù)： | 1/25頁 |
| 文件大?。?/td> | 648K |
| 代理商： | IDT71P73204 |
JULY 2005
DSC-6431/00
2005 Integrated Device Technology, Inc. “QDR SRAMs and Quad Data Rate RAMs comprise a new famly of products developed by Cypress Semconductor, IDT, and Mcron Technology, Inc.
“
1
18Mb Pipelined
DDRII SRAM
Burst of 4
IDT71P73204
IDT71P73104
IDT71P73804
IDT71P73604
Description
The IDT DDRII
TM
Burst of four SRAMs are high-speed synchro-
nous memories with a double-data-rate (DDR), bidirectional data port.
This scheme allows maximzation on the bandwidth on the data bus by
passing two data items per clock cycle. The address bus operates at
less than single data rate speeds,allowing the user to fan out addresses
and ease systemdesign while maintaining maximumperformance on
data transfers.
The DDRII has scalable output impedance on its data output bus
and echo clocks, allowing the user to tune the bus for low noise and high
performance.
All interfaces of the DDRII SRAMare HSTL, allowing speeds
beyond SRAMdevices that use any formof TTL interface. The inter-
face can be scaled to higher voltages (up to 1.9V) to interface with 1.8V
systems if necessary. The device has a V
DDQ
and
a separate Vref,
allowing the user to designate the interface operational voltage, inde-
pendent of the device core voltage of 1.8V V
DD.
The
output impedance
control allows the user to adjust the drive strength to adapt to a wide
range of loads and transmssion lines.
Functional Block Diagram
Notes
1) Represents 8 data signal lines for x8, 9 signal lines for x9, 18 signal lines for x18, and 36 signal lines for x36
2) Represents 19 address signal lines for x8 and x9, 20 address signal lines for x18, and 19 address signal lines for x36.
3) Represents 1 signal line for x9, 2 signal lines for x18, and four signal lines for x36. On x8 parts, the
BW
is a “nibble write” and there are 2
signal lines.
4) Represents 16 data signal lines for x8, 18 signal lines for x9, 36 signal lines for x18, and 72 signal lines for x36.
ADD
REG
CTRL
LOGIC
CLK
GEN
(Note2)
SA
SA
0
SA
1
LD
RW
BW
x
(Note3)
K
K
C
C
SELECT OUTPUT CONTROL
W
S
O
O
WRITE DRIVER
(Note4)
(Note2)
CQ
CQ
DQ
(Note1)
(Note4)
18M
MEMORY
ARRAY
6431 drw 16
DATA
REG
(Note1)
◆
18Mb Density (2Mx8, 2Mx9, 1Mx18, 512Kx36)
Common Read and Write Data Port
Dual Echo Clock Output
4-Word Burst on all SRAMaccesses
Multiplexed Address Bus
-
One Read or One Write request per two clock
cycles.
DDR (Double Data Rate) Data Bus
- Four word bursts data per two clock cycles
◆
Depth expansion through Control Logic
◆
HSTL (1.5V) inputs that can be scaled to receive signals
from1.4V to 1.9V.
◆
Scalable output drivers
-
Can drive HSTL, 1.8V TTL or any voltage level
from1.4V to 1.9V.
-
Output Impedance adjustable from35 ohms to 70
ohms
◆
1.8V Core Voltage (V
DD
)
◆
JTAG Interface
◆
165-ball, 1.0mmpitch, 13mmx 15mmfBGA Package
◆
◆
◆
◆
◆
Features
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT71P73204167BQ | 18Mb Pipelined DDR⑩II SRAM Burst of 4 |
| IDT71P73204200BQ | 18Mb Pipelined DDR⑩II SRAM Burst of 4 |
| IDT71P73204250BQ | 18Mb Pipelined DDR⑩II SRAM Burst of 4 |
| IDT71P73604 | 18Mb Pipelined DDR⑩II SRAM Burst of 4 |
| IDT71P73604167BQ | 18Mb Pipelined DDR⑩II SRAM Burst of 4 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT71P73604S167BQ | 功能描述:IC SRAM 18MBIT 167MHZ 165FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:378 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應(yīng)商設(shè)備封裝:48-CBGA（7x7） 包裝:托盤 |
| IDT71P73604S167BQ8 | 功能描述:IC SRAM 18MBIT 167MHZ 165FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:378 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應(yīng)商設(shè)備封裝:48-CBGA（7x7） 包裝:托盤 |
| IDT71P73604S200BQ | 功能描述:IC SRAM 18MBIT 200MHZ 165FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:378 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應(yīng)商設(shè)備封裝:48-CBGA（7x7） 包裝:托盤 |
| IDT71P73604S200BQ8 | 功能描述:IC SRAM 18MBIT 200MHZ 165FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:378 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應(yīng)商設(shè)備封裝:48-CBGA（7x7） 包裝:托盤 |
| IDT71P73604S250BQ | 功能描述:IC SRAM 18MBIT 250MHZ 165FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:378 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應(yīng)商設(shè)備封裝:48-CBGA（7x7） 包裝:托盤 |
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