參數(shù)資料
型號： IRF1405
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A)
中文描述： 功率MOSFET（減振鋼板基本\u003d 55V的，的Rds（on）\u003d 5.3mohm，身份證\u003d 169A條）
文件頁數(shù)： 2/9頁
文件大?。?/td> 116K
代理商： IRF1405
IRF1405
2
www.irf.com
Parameter
Min. Typ. Max. Units
55
–––
–––
0.057 –––
–––
4.6
2.0
–––
69
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
170
–––
44
–––
62
–––
13
–––
190
–––
130
–––
110
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 101A
V
DS
= 10V, I
D
= 250μA
V
DS
= 25V, I
D
= 110A
V
DS
= 55V, V
GS
= 0V
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= 101A
V
DS
= 44V
V
GS
= 10V
V
DD
= 38V
I
D
= 110A
R
G
= 1.1
V
GS
= 10V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 44V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
V
V/°C
m
V
S
5.3
4.0
–––
20
250
200
-200
260
66
93
–––
–––
–––
–––
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
5480
1210
280
5210
900
1500
–––
–––
–––
–––
–––
–––
pF
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
–––
–––
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 101A, V
GS
= 0V
T
J
= 25°C, I
F
= 101A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
88
250
1.3
130
380
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
169
680
A
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting T
J
= 25°C, L = 0.11mH
R
G
= 25
, I
AS
= 101A. (See Figure 12).
I
SD
≤
101A, di/dt
≤
210A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
400μs; duty cycle
≤
2%.
Notes:
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
相關PDF資料
PDF描述
IRF1407L Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A)
IRF1407S Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A)
IRF1407STRL TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB
IRF1407STRR TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB
IRF1407 Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A)
相關代理商/技術參數(shù)
參數(shù)描述
IRF1405_04 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET㈢ Power MOSFET
IRF1405L 制造商:International Rectifier 功能描述:N CHANNEL MOSFET, 55V, 131A, TO-262, Transistor Polarity:N Channel, Continuous D
IRF1405LPBF 功能描述:MOSFET MOSFT 55V 131A 5.3mOhm 170nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF1405PBF 功能描述:MOSFET MOSFT 55V 133A 5.3mOhm 170nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF1405S 功能描述:MOSFET N-CH 55V 131A D2PAK RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
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