參數(shù)資料
型號： IRF7338
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁數(shù)： 2/12頁
文件大?。?/td> 200K
代理商： IRF7338
2
www.irf.com
Parameter
Min. Typ. Max. Units
12
—
P-Ch -12
—
N-Ch
—
0.01
P-Ch
—
-0.01
—
—
—
—
—
—
—
—
N-Ch 0.6
—
P-Ch -0.40
—
N-Ch 9.2
—
P-Ch 3.5
—
N-Ch
—
—
P-Ch
—
—
N-Ch
—
—
P-Ch
—
—
N-Ch
––
—
P-Ch
—
—
N-Ch
—
—
P-Ch
—
—
N-Ch
—
—
P-Ch
—
—
N-Ch
—
—
P-Ch
—
—
N-Ch
—
6.0
P-Ch
—
9.6
N-Ch
—
7.6
P-Ch
—
13
N-Ch
—
26
P-Ch
—
27
N-Ch
—
34
P-Ch
—
25
N-Ch
—
640
P-Ch
—
490
N-Ch
—
340
P-Ch
—
80
N-Ch
—
110
P-Ch
—
58
Conditions
N-Ch
—
—
—
—
V
GS
= 0V, I
D
= 250μA
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= 1mA
Reference to 25°C, I
D
= -1mA
V
GS
= 4.5V, I
D
= 6.0A
V
GS
= 3.0V, I
D
= 2.0A
V
GS
= -4.5V, I
D
= -2.9A
V
GS
= -2.7V, I
D
= -1.5A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= V
, I
D
= -250μA
V
DS
= 6.0V, I
D
= 6.0A
V
DS
= -6.0V, I
D
= -1.5A
V
DS
= 9.6V, V
GS
= 0V
V
DS
= -9.6 V, V
GS
= 0V
V
DS
= 9.6V, V
GS
= 0V, T
J
= 55°C
V
DS
= -9.6V, V
GS
= 0V, T
J
= 55°C
V
GS
= ± 12V
V
GS
= ± 8.0V
0.034
0.060
0.150
0.200
1.5
-1.0
—
—
20
-1.0
50
-25
±100
±100
8.6
6.6
1.9
1.3
3.9
1.6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
I
GSS
Gate-to-Source Forward Leakage
nA
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
I
DSS
Drain-to-Source Leakage Current
Q
g
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
N-Channel
I
D
= 6.0A, V
DS
= 6.0V, V
GS
= 4.5V
P-Channel
I
D
= -2.9A, V
DS
= -9.6V, V
GS
= -4.5 V
N-Channel
V
DD
= 6.0V, I
D
= 1.0A, R
G
= 6.0
,
V
GS
= 4.5V
P-Channel
V
DD
= -6.0V, I
D
= -2.9A, R
G
= 6.0
V
GS
= -4.5V
N-Channel
V
GS
= 0V, V
DS
= 9.0V, = 1.0MHz
P-Channel
V
GS
= 0V, V
DS
= -9.0V, = 1.0KHz
N-Ch
P-Ch
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width
≤
400μs; duty cycle
≤
2%.
Notes:
Parameter
Min. Typ. Max. Units
—
—
—
—
—
—
—
—
—
—
—
—
—
51
—
37
—
43
—
20
Conditions
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
6.3
-3.0
26
-13
1.3
-1.2
76
56
64
30
T
J
= 25°C, I
S
= 1.7A, V
GS
= 0V
T
J
= 25°C, I
S
= -2.9A, V
GS
= 0V
N-Channel
T
= 25°C, I
F
= 1.7A, di/dt = 100A/μs
P-Channel
T
J
= 25°C, I
F
= -2.9A, di/dt = -100A/μs
I
S
Continuous Source Current (Body Diode)
I
SM
Pulsed Source Current (Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
Surface mounted on 1 in square Cu board.
The N-channel MOSFET can withstand 15V V
GS
max
for up to 24 hours over the life of the device.
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