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參數(shù)資料
| 型號： | IRF7422D2 |
| 廠商： | International Rectifier |
| 英文描述： | Co-packaged HEXFET Power MOSFET and Schottky Diode(同封裝 HEXFET晶體管和肖特基二極管) |
| 中文描述： | 共同封裝的HEXFET功率MOSFET和肖特基二極管（同封裝的HEXFET晶體管和肖特基二極管） |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 132K |
| 代理商： | IRF7422D2 |
IRF7422D2
2
www.irf.com
Parameter
Min. Typ. Max. Units
-20
–––
–––
0.07
––– 0.115 0.14
-0.70 –––
4.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
15
–––
2.2
–––
6.0
–––
8.4
–––
26
–––
51
–––
33
–––
610
–––
310
–––
170
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
–––
0.09
V
V
GS
= 0V, I
D
= -250μA
V
GS
= -4.5V, I
D
= -2.2A
V
GS
= -2.7V, I
D
= -1.8A
V
DS
= V
GS
, I
D
= -250μA
V
DS
= -16V, I
D
= -2.2A
V
DS
= -16V, V
GS
= 0V
V
DS
= -16V, V
GS
= 0V, T
J
= 125°C
V
GS
= -12V
V
GS
= 12V
I
D
= -2.2A
V
DS
= -16V
V
GS
= -4.5V, See Fig. 6 and 9
V
DD
= -10V
I
D
= -2.2A
R
G
= 6.0
R
D
= 4.5
, See Fig. 10
V
GS
= 0V
V
DS
= -15V
= 1.0MHz, See Fig. 5
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
–––
–––
-1.0
-25
-100
100
22
3.3
9.0
–––
–––
–––
–––
–––
–––
–––
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
MOSFET Source-Drain Ratings and Characteristics
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
pF
MOSFET Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
DSS
Drain-to-Source Leakage Current
I
GSS
μA
nA
ns
R
DS(on)
Static Drain-to-Source On-Resistance
Parameter
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
56
–––
71
Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Schottky Diode Maximum Ratings
Continuous Source Current(Body Diode) –––
Pulsed Source Current (Body Diode)
Body Diode Forward Voltage
Reverse Recovery Time (Body Diode)
Reverse RecoveryCharge
-2.5
-17
-1.0
84
110
V
ns
nC
T
J
= 25°C, I
S
= -1.8A, V
GS
= 0V
T
J
= 25°C, I
F
= -2.2A
di/dt = -100A/μs
A
Parameter
Max. Units
2.8
1.8
200
20
Conditions
If (av)
Max. Average Forward Current
50% Duty Cycle. Rectangular Wave, Tc = 25°C
50% Duty Cycle. Rectangular Wave, Tc = 70°C
5μs sine or 3μs Rect. pulse
10ms sine or 6ms Rect. pulse load condition &
I
SM
Max. peak one cycle Non-repetitive
Surge current
Following any rated
with Vrrm applied
A
A
Parameter
Max. Units
0.57
0.77
0.52
0.79
0.13
18
310
4900 V/μs Rated Vr
Conditions
Vfm
Max. Forward voltage drop
If = 3.0, Tj = 25°C
If = 6.0, Tj = 25°C
If = 3.0, Tj = 125°C
If = 6.0, Tj = 125°C
Vr = 20V
.
Irm
Max. Reverse Leakage current
Tj = 25°C
Tj = 125°C
Ct
dv/dt
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
Max. Junction Capacitance
Max. Voltage Rate of Charge
pF
Vr = 5Vdc ( 100kHz to 1 MHz) 25°C
Schottky Diode Electrical Specifications
V
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